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1 – 5 of 5Sudipta Ghosh, P. Venkateswaran and Subir Kumar Sarkar
High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads…
Abstract
Purpose
High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit.
Design/methodology/approach
Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances.
Findings
The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter.
Originality/value
Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node.
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Gözde Konuk Ege, Özge Akay and Hüseyin Yüce
This study aims to investigate the ammonia-sensing performance of polyaniline/polyethylene oxide (PANI/PEO) and polyaniline/polyethylene oxide/zinc oxide (PANI/PEO-ZnO) composite…
Abstract
Purpose
This study aims to investigate the ammonia-sensing performance of polyaniline/polyethylene oxide (PANI/PEO) and polyaniline/polyethylene oxide/zinc oxide (PANI/PEO-ZnO) composite nanofibers at room temperature.
Design/methodology/approach
Gas sensor structures were fabricated using microfabrication techniques. First, onto the SiO2 wafer, gold electrodes were fabricated via thermal evaporation. PANI/PEO nanofibers were produced by the electrospinning method, and the ZnO layer was deposited by using radio frequency (RF) magnetron sputtering on the electrospun nanofibers as a sensing layer. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and X-ray diffraction were performed to characterize the analysis of nanofibers. After all, gas sensing analysis of PANI/PEO and PANI/PEO/ZnO nanofibers was conducted using an experimental setup at room temperature conditions. Furthermore, the impact of humidity (17%–90% RH) on the sensor resistance was actively investigated.
Findings
FTIR analysis confirms the presence of functional groups of PANI, PEO and ZnO in nanofiber structure. SEM micrographs demonstrate beads-free, thinner and smooth nanofibers with ZnO contribution to electrospun PANI/PEO nanofibers. Moreover, according to the gas sensing results, the PANI/PEO nanofibers exhibit 115 s and 457 s response time and recovery time, respectively. However, the PANI/PEO/ZnO nanofibers exhibit 245 s and 153 s response time and recovery time, respectively. PANI/PEO/MOx composite nanofibers ensure stability to the NH3 gas owing to the high surface/volume ratio and decrease in the humidity dependence of gas sensors, making gas sensors more stable to the environment.
Originality/value
In this study, ZnO was deposited via RF magnetron sputtering techniques on PANI/PEO nanofibers as a different approach instead of in situ polymerization to investigate and enhance the sensor response and recovery time of the PANI/PEO/ZnO and PANI/PEO composite nanofibers to ammonia. These results indicated that ZnO can enhance the sensing properties of conductive polymer-based resistive sensors.
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Ali Hassanzadeh, Ebrahim Ghorbani-Kalhor, Khalil Farhadi and Jafar Abolhasani
This study’s aim is to introduce a high-performance sorbent for the removal of both anionic (Congo red; CR) and cationic (methylene blue; MB) dyes from aqueous solutions.
Abstract
Purpose
This study’s aim is to introduce a high-performance sorbent for the removal of both anionic (Congo red; CR) and cationic (methylene blue; MB) dyes from aqueous solutions.
Design/methodology/approach
Sodium silicate is adopted as a substrate for GO and AgNPs with positive charge are used as modifiers. The synthesized nanocomposite is characterized by FTIR, FESEM, EDS, BET and XRD techniques. Then, some of the most effective parameters on the removal of CR and MB dyes such as solution pH, sorbent dose, adsorption equilibrium time, primary dye concentration and salt effect are optimized using the spectrophotometry technique.
Findings
The authors successfully achieved notable maximum adsorption capacities (Qmax) of CR and MB, which were 41.15 and 37.04 mg g−1, respectively. The required equilibrium times for maximum efficiency of the developed sorbent were 10 and 15 min for CR and MB dyes, respectively. Adsorption equilibrium data present a good correlation with Langmuir isotherm, with a correlation coefficient of R2 = 0.9924 for CR and R2 = 0.9904 for MB, and kinetic studies prove that the dye adsorption process follows pseudo second-order models (CR R2 = 0.9986 and MB R2 = 0.9967).
Practical implications
The results showed that the proposed mechanism for the function of the developed sorbent in dye adsorption was based on physical and multilayer adsorption for both dyes onto the active sites of non-homogeneous sorbent.
Originality/value
The as-prepared nano-adsorbent has a high ability to remove both cationic and anionic dyes; moreover, to the high efficiency of the adsorbent, it has been tried to make its synthesis steps as simple as possible using inexpensive and available materials.
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Saima Habib, Farzana Kishwar, Zulfiqar Ali Raza and Sharjeel Abid
This study aims to present a sustainable approach in the natural dyeing of cellulose fabric followed by nanosilver finishing through a green crosslinker of citric acid for…
Abstract
Purpose
This study aims to present a sustainable approach in the natural dyeing of cellulose fabric followed by nanosilver finishing through a green crosslinker of citric acid for potential antibacterial surgical gown fabrication.
Design/methodology/approach
The nanosilver finish was reproduced using the chemical reduction method. The fabric dyeing was performed on a lab-scale dyeing machine, whereas silver nano-finishing through a pad-dry-cure approach. Citric acid was used as an eco-friendly crosslinker. The specimens were characterized for antibacterial activity, surface chemical, textile, color properties and finish release trend.
Findings
The results demonstrated the successful application of curcumin dye followed by silver nano-finishing. The resultant fabric exhibited appropriate textile, dyeing performance indicators, hydrophobic behavior and sustainable broad-spectrum antibacterial activity.
Practical implications
The prepared nanosilver-finished/curcumin-treated fabric expressed desirable properties for potential applications in the fabrication of surgical gowns.
Originality/value
The authors found no reports on an extensive examination of nanosilver finishing on the color parameters of curcumin-dyed cellulose fabric while retaining its textile and comfort properties for possible surgical gown fabrication.
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The purpose of this study aims to synthesize a novel donor–acceptor dye based on phenothiazine as a donor (D) and nonconjugated spacer was devised and synthesized by condensing of…
Abstract
Purpose
The purpose of this study aims to synthesize a novel donor–acceptor dye based on phenothiazine as a donor (D) and nonconjugated spacer was devised and synthesized by condensing of 2,2'-(1H-indene-1,3(2H)-diylidene) dimalononitrile with aldehyde and the practical synthesis methodology as given in Scheme 1.
Design/methodology/approach
The prepared phenothiazine dye was systematically experimentally and theoretically examined and characterized using nuclear magnetic resonance spectroscopy (1H,13C NMR), Fourier-transform infrared spectroscopy (IR) and high-resolution mass spectrometry. Density functional theory (DFT) and time-dependent density functional theory DT-DFT calculations were implemented to determine the electronic properties of the new dye
Findings
The UV-Vis absorption and fluorescence spectroscopy of the synthesized dye was investigated in a variety of solvents with varying polarities to demonstrate positive solvatochromism correlated with intramolecular charge transfer (ICT). The probe’s quantum yields (Фf) are experimentally measured in ethanol, and the Stokes shifts are found to be in the 4846–9430 cm−1 range.
Originality/value
The findings depicted that the novel (D-π-A) chromophores may act as a significant factor in the organic optoelectronics.
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