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High packaging density in the present VLSI era builds an acute power crisis, which limits the use of MOSFET device as a constituent block in CMOS technology. This leads researchers in looking for alternative devices, which can replace the MOSFET in CMOS VLSI logic design. In a quest for alternative devices, tunnel field effect transistor emerged as a potential alternative in recent times. The purpose of this study is to enhance the performances of the proposed device structure and make it compatible with circuit implementation. Finally, the performances of that circuit are compared with CMOS circuit and a comparative study is made to find the superiority of the proposed circuit with respect to conventional CMOS circuit.

Silicon–germanium heterostructure is currently one of the most promising architectures for semiconductor devices such as tunnel field effect transistor. Analytical modeling is computed and programmed with MATLAB software. Two-dimensional device simulation is performed by using Silvaco TCAD (ATLAS). The modeled results are validated through the ATLAS simulation data. Therefore, an inverter circuit is implemented with the proposed device. The circuit is simulated with the Tanner EDA tool to evaluate its performances.

The proposed optimized device geometry delivers exceptionally low OFF current (order of 10^−18 A/um), fairly high ON current (5x10^−5 A/um) and a steep subthreshold slope (20 mV/decade) followed by excellent ON–OFF current ratio (order of 10^13) compared to the similar kind of heterostructures. With a very low threshold voltage, even lesser than 0.1 V, the proposed device emerged as a good replacement of MOSFET in CMOS-like digital circuits. Hence, the device is implemented to construct a resistive inverter to study the circuit performances. The resistive inverter circuit is compared with a resistive CMOS inverter circuit. Both the circuit performances are analyzed and compared in terms of power dissipation, propagation delay and power-delay product. The outcomes of the experiments prove that the performance matrices of heterojunction Tunnel FET (HTFET)-based inverter are way ahead of that of CMOS-based inverter.

Germanium–silicon HTFET with stack gate oxide is analytically modeled and optimized in terms of performance matrices. The device performances are appreciable in comparison with the device structures published in contemporary literature. CMOS-like resistive inverter circuit, implemented with this proposed device, performs well and outruns the circuit performances of the conventional CMOS circuit at 45-nm technological node.

The purpose of this paper is to present an automatic approach for mesh sizing field generation of complicated  computer-aided design (CAD) models.

In this paper, the authors present an automatic approach for mesh sizing field generation. First, a source point extraction algorithm is applied to capture curvature and proximity features of CAD models. Second, according to the distribution of feature source points, an octree background mesh is constructed for storing element size value. Third, mesh size value on each node of background mesh is calculated by interpolating the local feature size of the nearby source points, and then, an initial mesh sizing field is obtained. Finally, a theoretically guaranteed smoothing algorithm is developed to restrict the gradient of the mesh sizing field.

To achieve high performance, the proposed approach has been implemented in multithreaded parallel using OpenMP. Numerical results demonstrate that the proposed approach is remarkably efficient to construct reasonable mesh sizing field for complicated CAD models and applicable for generating geometrically adaptive triangle/tetrahedral meshes. Moreover, since the mesh sizing field is defined on an octree background mesh, high-efficiency query of local size value could be achieved in the following mesh generation procedure.

How to determine a reasonable mesh size for complicated CAD models is often a bottleneck of mesh generation. For the complicated models with thousands or even ten thousands of geometric entities, it is time-consuming to construct an appropriate mesh sizing field for generating high-quality mesh. A parallel algorithm of mesh sizing field generation with low computational complexity is presented in this paper, and its usability and efficiency have been verified.

The purpose of this paper is to present the influence of inter-turn short circuit faults (ITSF) on electromagnetic vibration in high-voltage line-starting permanent magnet synchronous motor (HVLSPMSMS).

In this paper, the ampere–conductor wave model of HVLSPMSM after ITSF is established. Second, a mathematical model of the magnetic field after ITSF is established, and the influence law of the ITSF on the air-gap magnetic field is analyzed. Further, the mathematical expression of the electromagnetic force density is established based on the Maxwell tensor method. The impact of HVLSPMSM torque ripple frequency, radial electromagnetic force spatial–temporal distribution and rotor unbalanced magnetic tension force by ITSF is revealed. Finally, the electromagnetic–mechanical coupling model of HVLSPMSM is established, and the vibration spectra of the motor with different degrees of ITSF are solved by numerical calculation.

In this study, it is found that the 2np order flux density harmonics and (2 N + 1) p order electromagnetic forces are not generated when ITSF occurs in HVLSPMSM.

By analyzing the multi-harmonics of HVLSPMSM after ITSF, this paper provides a reliable method for troubleshooting from the perspective of vibration and torque fluctuation and rotor unbalanced electromagnetic force.

The purpose of this study is to develop a magnetic resonance imaging (MRI)-safe iron-free electrical actuator for MR-guided surgical interventions.

The paper deals with the design of an MRI compatible electrical actuator. Three-dimensional electromagnetic and thermal analytical models have been developed to design the actuator. These models have been validated through 3D finite element (FE) computations. The analytical models have been inserted in an optimization procedure that uses genetic algorithms to find the optimal parameters of the actuator.

The analytical models are very fast and precise compared to the FE models. The computation time is 0.1 s for the electromagnetic analytical model and 3 min for the FE one. The optimized actuator does not perturb imaging sequence even if supplied with a current 10 times higher than its rated one. Indeed, the actuator’s magnetic field generated in the imaging area does not exceed 1 ppm of the B₀ field generated by the MRI scanner. The actuator can perform up to 25 biopsy cycles without any risk to the actuator or the patient since he maximum temperature rise of the actuator is about 20°C. The actuator is compact and lightweight compared to its pneumatic counterpart.

The MRI compatible actuator uses the B₀ field generated by scanner as inductor. The design procedure uses magneto-thermal coupled models that can be adapted to the design of a variety actuation systems working in MRI environment.

Adoption of integrated MOS based pseudo-resistor (PR) structures instead of using off-chip passive poly resistors for analog circuits in complementary metal oxide semiconductor technology (CMOS) is an area-efficient way for realizing larger time constants. However, issue of common-mode voltage shifting and excess dependency on the process and temperature variations introduce nonlinearity in such structures. So there is dire need to not only closely look for the origin of the problem with the help of a thorough mathematical analysis but also suggest the most suitable PR structure for the purpose catering broadly to biomedical analog circuit applications.

In this work, incremental resistance (IR) expressions and IR range for balanced PR (BPR) structures operating in the subthreshold region have been closely analyzed for broader range of process-voltage-temperature variations. All the post-layout simulations have been obtained using BSIM3V3 device models in 0.18 µm standard CMOS process.

The obtained results show that the pertinent problem of common-mode voltage shifting in such PR structures is completely resolved in scaled gate linearization and bulk-driven quasi-floating gate (BDQFG) BPR structures. Among all BPR structures, BDQFG BPR remarkably shows constant IR value of 1 TΩ over −1 V to 1 V voltage swing for wider process and temperature variations.

Various balanced PR design techniques reported in this work will help the research community in implementing larger time constants for analog-mixed signal circuits.

The PR design techniques presented in the present piece of work is expected to be used in developing tunable and accurate biomedical prosthetics.

The BPR structures thoroughly analyzed and reported in this work may be useful in the design of analog circuits specifically for applications such as neural signal recording, cardiac electrical impedance tomography and other low-frequency biomedical applications.

The purpose of this paper is to design and construct an amplitude shift keying (ASK) modulator, which, using the digital binary modulating signal, controls a floating memristor emulator (MR) internally without the need for additional control circuits to achieve the ASK modulated wave.

A binary digital unipolar signal to be modulated is converted by a pre-processor circuit into a suitable bipolar modulating direct current (DC) signal for the control of the MR state, using current conveyors the carrier signal’s amplitude is varied with the change in the memristance of the floating MR. A high pass filter is then used to remove the DC control signal (modulating signal) leaving only the modulated carrier signal.

The results from the experiment and simulation are in agreement showed that the MR can be switched between two states and that a change in the carrier signals amplitude can be achieved by using an MR. Thus, showing that the circuit behavior is in line with the proposed theory and validating the said theory.

In this paper, the binary signal to be modulated is modified into a suitable control signal for the MR, thus the MR relies on the internal operation of the modulator circuit for the control of its memristance. An ASK modulation can then be achieved using a floating memristor without the need for additional circuits or signals to control its memristance.

The ionization of the air surrounding the phase conductor in high-voltage transmission lines results in a phenomenon known as the Corona effect. To avoid this, Corona rings are used to dampen the electric field imposed on the insulator. The purpose of this study is to present a fast and intelligent surrogate model for determination of the electric field imposed on the surface of a 120 kV composite insulator, in presence of the Corona ring.

Usually, the structural design parameters of the Corona ring are selected through an optimization procedure combined with some numerical simulations such as finite element method (FEM). These methods are slow and computationally expensive and thus, extremely reducing the speed of optimization problems. In this paper, a novel surrogate model was proposed that could calculate the maximum electric field imposed on a ceramic insulator in a 120 kV line. The surrogate model was created based on the different scenarios of height, radius and inner radius of the Corona ring, as the inputs of the model, while the maximum electric field on the body of the insulator was considered as the output.

The proposed model was based on artificial intelligence techniques that have high accuracy and low computational time. Three methods were used here to develop the AI-based surrogate model, namely, Cascade forward neural network (CFNN), support vector regression and K-nearest neighbors regression. The results indicated that the CFNN has the highest accuracy among these methods with 99.81% R-squared and only 0.045468 root mean squared error while the testing time is less than 10 ms.

To the best of the authors’ knowledge, for the first time, a surrogate method is proposed for the prediction of the maximum electric field imposed on the high voltage insulators in the presence Corona ring which is faster than any conventional finite element method.

To prevent the coil from burning or getting damaged, it is necessary to estimate the duration of its operation as long as its temperature does not exceed the permissible limit. This paper aims to investigate the effect of switching on the thermal behavior of impregnated and nonimpregnated windings. Also, the safe operating time for each winding is determined.

The power loss of the winding is expressed as a function of the winding specifications. Using homogenization techniques, the equivalent thermal properties for the homogenized winding are calculated and used in a proposed thermal equivalent circuit for winding modeling and analysis. The validity and accuracy of the proposed model are determined by comparing its analysis results and simulation and measurement results.

The results show that copper windings have better thermal behavior and lower temperature compared to aluminum windings. On the other hand, by impregnating or increasing the packing factor of the winding, the thermal behavior is improved. Also, by choosing the right duty cycle for the winding current source, it is possible to prevent the burning or damage of the winding and increase its lifespan. Comparing the measurement results with the analysis results shows that the proposed equivalent circuit has an error of less than 4% in the calculation of the winding center temperature.

In this paper, the effect of temperature on the electrical resistance of the coil is ignored. Also, rectangular wires were not investigated. Research in these topics are considered as future work.

By calculating the thermal time constant of the winding, its safe operation time can be calculated so that its temperature does not exceed the tolerable value (150 °C). The proposed method analyzes both impregnated and nonimpregnated windings with various schemes. It investigates the effects of switching on their thermal behavior. Additionally, it determines the safe operating time for each type of winding.

The purpose of this paper is to gain a better understanding on how metasurfaces behave, in terms of currents in each unit cell. A better knowledge of their behavior could lead to an ad-hoc design for specific applications.

The methodology used is both theoretical and numerical; it is based on circuit theory and on an optimization procedure.

The results show that when the knowledge of the current in each unit cell of a metasurface is needed, the most common approximations currently used are often not accurate. Furthermore, a procedure for the termination of a metasurface, with application-driven goals, is given.

This paper investigates the distribution of the currents in a 2D metamaterial realized with magnetically coupled resonant coils. Different models for the analysis of these structures are illustrated, and the effects of the approximations they introduce on the current values are shown and discussed. Furthermore, proper terminations of the resonators on the boundaries have been investigated by implementing a numerical optimization procedure with the purpose of achieving a uniform distribution of the resonator currents. The results show that the behavior of a metasurface (in terms of currents in each single resonator) depends on different properties; as a consequence, their design is not a trivial task and is dependent on the specific applications they are designed for. A design strategy, with lumped impedance termination, is here proposed.

This paper aims to concentrate on recent innovations in flexible wearable sensor technology tailored for monitoring vital signals within the contexts of wearable sensors and systems developed specifically for monitoring health and fitness metrics.

In recent decades, wearable sensors for monitoring vital signals in sports and health have advanced greatly. Vital signals include electrocardiogram, electroencephalogram, electromyography, inertial data, body motions, cardiac rate and bodily fluids like blood and sweating, making them a good choice for sensing devices.

This report reviewed reputable journal articles on wearable sensors for vital signal monitoring, focusing on multimode and integrated multi-dimensional capabilities like structure, accuracy and nature of the devices, which may offer a more versatile and comprehensive solution.

The paper provides essential information on the present obstacles and challenges in this domain and provide a glimpse into the future directions of wearable sensors for the detection of these crucial signals. Importantly, it is evident that the integration of modern fabricating techniques, stretchable electronic devices, the Internet of Things and the application of artificial intelligence algorithms has significantly improved the capacity to efficiently monitor and leverage these signals for human health monitoring, including disease prediction.