Search results

Microribbon with meander type based on giant magnetoimpedance (GMI) effect has become a research hot spot due to their higher sensitivity and spatial resolution. The purpose of this paper is to further optimize the line spacing to improve the performance of meanders for sensor application.

The model of GMI effect of microribbon with meander type is established. The effect of line spacing (Ls) on GMI behavior in meanders is analyzed systematically.

Comparison of theory and experiment indicates that decreasing the line spacing increases the negative mutual inductance and a consequent increase in the GMI effect. The maximum value of the GMI ratio increases from 69% to 91.8% (simulation results) and 16.9% to 51.4% (experimental results) when the line spacing is reduced from 400 to 50 µm. The contribution of line spacing versus line width to the GMI ratio of microribbon with meander type was contrasted. This behavior of the GMI ratio is dominated by the overall negative contribution of the mutual inductance.

This paper explores the effect of line spacing on the GMI ratio of meander type by comparing the simulation results with the experimental results. The superior line spacing is found in the identical sensing area. The findings will contribute to the design of high-performance micropatterned ribbon with meander-type GMI sensors and the establishment of a ribbon-based magnetic-sensitive biosensing system.

The design, fabrication and experimental validation of defected microstrip structure (DMS) are proposed to address the problem of near-end crosstalk (NEXT) and far-end crosstalk (FEXT) between the microstrip transmission lines in a printed circuit board.

The proposed DMS evolved with the combination of spur line (L-shaped DMS) and U-shaped DMS topologies. This technique reduces the strength of electromagnetic coupling and suppresses crosstalk by optimizing the capacitive and inductive coupling ratio between the linked microstrip lines. The practical inductance value is much more significant in DMS than in defected ground structures (DGS), but the capacitance value remains the same.

A DMS unit is etched on the aggressor microstrip line instead of the DGS circuit. Because there is no leakage via the ground plane and the circuit size is far smaller than with DGS, the enclosure issue is disregarded. DMS structures have a larger effective inductance and are resistant to electromagnetic interference. A tightly coupled transmission line structure with minimal separation between the coupled microstrip line is designed using DMS. Further research must be conducted to improve the NEXT, FEXT and spacing between the transmission lines.

Simulation and actual measurement results show that the proposed DMS structure can effectively suppress crosstalk by analysing the S-parameters, namely, S_12, S_13 and S_14, with measured values of 1.48 dB, 20.65 dB and 21.099 dB, respectively. The data rate is measured to be 1.34 Gbps as per the eye diagram characterization. The results show that the NEXT and FEXT are reduced by approximately 20 dB in the frequency range of 1–11 GHz for mixed signals. The substantial measured results in the vector network analyser coincide with the computer simulation technology microwave studio suite simulation results.

This paper aims to comprehensively review the preparation methods of superhydrophobic surfaces (SHPS) for corrosion protection of Mg alloy in recent years.

The preparation methods, wettability and corrosion resistance of SHPS on Mg alloy in the past three years are systematically described in this paper.

Two types of SHPS, including single-layer and multilayer coatings for corrosion protection of Mg alloy are summarized. Preparing multilayered coatings with multifunction is the current trend in developing SHPS on Mg alloy.

This paper reviewed the preparation methods and corrosion resistance of SHPS on Mg alloys. It provides a valuable reference for researchers to develop highly durable SHPS with excellent corrosion resistance for Mg alloys.

The metallic alloys and their components fabricated via laser powder bed fusion (LPBF) suffer from the microvoids formed inevitably due to the extreme solidification rate during fabrication, which are impossible to be removed by heat treatment. This paper aims to remove those microvoids in as-built AlSi10Mg alloys by hot forging and enhance their mechanical properties.

AlSi10Mg samples were built using prealloyed powder with a set of optimized LPBF parameters, viz. 350 W of laser power, 1,170 mm/s of scan speed, 50 µm of layer thickness and 0.24 mm of hatch spacing. As-built samples were preheated to 430°C followed by immediate pressing with two different thickness reductions of 10% and 35%. The effect of hot forging on the microstructure was analyzed by means of X-ray diffraction, scanning electron microscopy, electron backscattered diffraction and transmission electron microscopy. Tensile tests were performed to reveal the effect of hot forging on the mechanical properties.

By using hot forging, the large number of microvoids in both as-built and post heat-treated samples were mostly healed. Moreover, the Si particles were finer in forged condition (∼150 nm) compared with those in heat-treated condition (∼300 nm). Tensile tests showed that compared with heat treatment, the hot forging process could noticeably increase tensile strength at no expense of ductility. Consequently, the toughness (integration of tensile stress and strain) of forged alloy increased by ∼86% and ∼24% compared with as-built and heat-treated alloys, respectively.

Hot forging can effectively remove the inevitable microvoids in metals fabricated via LPBF, which is beneficial to the mechanical properties. These findings are inspiring for the evolution of the LPBF technique to eliminate the microvoids and boost the mechanical properties of metals fabricated via LPBF.

Numerous metals can be processed using the additive manufacturing process laser-based powder bed fusion of metals (PBF-LB/M, ISO/ASTM 52900). The main advantages of additive manufacturing technologies are the high degree of design freedom and the cost-effective implementation of lightweight structures. This could be profitable for gears with increased power density, combining reduced mass with considerable material strength. Current research on additively manufactured gears is focused on developing lightweight structures but is seldom accompanied by simulations and even less by mechanical testing. There has been very little research into the mechanical and material properties of additively manufactured gears. The purpose of this study is to investigate the behavior of lightweight structures in additively manufactured gears under static loads.

This research identifies the static load-carrying capacity of helical gears with different lightweight structures produced by PBF-LB/M with the case hardening steel 16MnCr5. A static gear loading test rig with a maximum torque at the pinion of T₁ = 1200 Nm is used. Further focus is set on analyzing material properties such as the relative density, microstructure, hardness depth profile and chemical composition.

All additively manufactured gear variants show no failure or plastic deformation at the maximum test load. The shaft hub connection, the lightweight hub designs and the gearing itself are stable and intact regarding their form and function. The identified material characteristics are comparable to conventionally manufactured gears (wrought and machined), but also some particularities were observed.

This research demonstrates the mechanical strength of lightweight structures in gears. Future research needs to consider the dynamic load-carrying capacity of additively manufactured gears.

The purpose of this study is to delve into the mechanism of Si3N4 nanowires (NWs) in Sn-based solder, thereby furnishing a theoretical foundation for the expeditious design and practical implementation of innovative lead-free solder materials in the electronic packaging industry.

This study investigates the effect of adding Si₃N₄ NWs to Sn58Bi solder in various mass fractions (0, 0.1, 0.2, 0.4, 0.6 and 0.8 Wt.%) for modifying the solder and joining the Cu substrate. Meanwhile, the melting characteristics and wettability of solder, as well as the microstructure, interfacial intermetallic compound (IMC) and mechanical properties of joint were evaluated.

The crystal plane spacing and lattice constant of Sn and Bi phase increase slightly. A minor variation in the Sn58Bi solder melting point was caused, while it does not impact its functionality. An appropriate Si₃N₄ NWs content (0.2∼0.4 Wt.%) significantly improves its wettability, and modifies the microstructure and interfacial IMC layer. The shear strength increases by up to 10.74% when adding 0.4 Wt.% Si₃N₄ NWs, and the failure mode observed is brittle fracture mainly. However, excessive Si₃N₄ will cause aggregation at the junction between the solder matrix and IMC layer, this will be detrimental to the joint.

The Si₃N₄ NWs were first used for the modification of lead-free solder materials. The relative properties of composite solder and joints were evaluated from different aspects, and the optimal ratio was obtained.

This paper aims to present the simulation, fabrication and testing of a novel ultra-wide band (UWB) band-pass filters (BPFs) with better transmission and rejection characteristics on a low-loss Taconic substrate and analyze using the coupled theory of resonators for UWB range covering L, S, C and X bands for radars, global positioning system (GPS) and satellite communication applications.

The filter is designed with a bent coupled transmission line on the top copper layer. Defected ground structures (DGSs) like complementary split ring resonators (CSRRs), V-shaped resonators, rectangular slots and quad circle slots (positioned inwards and outwards) are etched in the ground layer of the filter. The circular orientation of V-shaped resonators adds compactness when linearly placed. By arranging the quad circle slots outwards and inwards at the corner and core of the ground plane, respectively, two filters (Filters I and II) are designed, fabricated and measured. These two filters feature a quasi-elliptic response with transmission zeros (TZs) on either side of the bandpass response, making it highly selective and reflection poles (RPs), resulting in a low-loss filter response. The transmission line model and coupled line theory are implemented to analyze the proposed filters.

Two filters by placing the quad circle slots outwards (Filter I) and inwards (Filter II) were designed, fabricated and tested. The fabricated model (Filter I) provides transmission with a maximum insertion loss of 2.65 dB from 1.5 GHz to 9.2 GHz. Four TZs and five RPs are observed in the frequency response. The lower and upper stopband band width (BW) of the measured Filter I are 1.2 GHz and 5.5 GHz of upper stopband BW with rejection level greater than 10 dB, respectively. Filter II (inward quad circle slots) operates from 1.4 GHz to 9.05 GHz with 1.65 dB maximum insertion loss inside the passband with four TZs and four RPs, which, in turn, enhances the filter characteristics in terms of selectivity, flatness and stopband. Moreover, 1 GHz BW of lower and upper stopbands are observed. Thus, the fabricated filters (Filters I and II) are therefore evaluated, and the outcomes show good agreement with the electromagnetic simulation response.

The limitation of this work is the back radiation caused by DGS, which can be eradicated by placing the filter in the cavity and retaining its performance.

The proposed UWB BPFs with novel resonators find their role in the UWB range covering L, S, C and X bands for radars, GPS and satellite communication applications.

To the best of the authors’ knowledge, for the first time, the authors develop a compact UWB BPFs (Filters I and II) with BW greater than 7.5 GHz by combining reformed coupled lines and DGS resonators (CSRRs, V-shaped resonators [modified hairpin resonators], rectangular slots and quad circle slots [inwards and outwards]) for radars, GPS and satellite communication applications.

This study aims to explore the feasibility of adding Si₃N₄ nanoparticles to Sn58Bi and provides a theoretical basis for designing and applying new lead-free solder materials for the electronic packaging industry.

In this paper, Sn58Bi-xSi₃N₄ (x = 0, 0.2, 0.4, 0.6, 0.8, 1.0 Wt.%) was prepared for bonding Cu substrate, and the changes in thermal properties, wettability, microstructure, interfacial intermetallic compound and mechanical properties of the composite solder were systematically studied.

The experiment results demonstrate that including Si₃N₄ nanoparticles does not significantly impact the melting point of Sn58Bi solder, and the undercooling degree of solder only fluctuates slightly. The molten solder spreading area reached a maximum of 96.17 mm², raised by 19.41% relative to those without Si₃N₄, and the wetting angle was the smallest at 0.6 Wt.% of Si₃N₄, with a minimum value of 8.35°. When the Si₃N₄ nanoparticles reach 0.6 Wt.%, the solder joint microstructure is significantly refined. Appropriately adding Si₃N₄ nanoparticles will slightly increase the solder alloy hardness. When the concentration of Si₃N₄ reaches 0.6 Wt.%, the joints shear strength reached 45.30 MPa, representing a 49.85% increase compared to those without additives. A thorough examination indicates that legitimately incorporating Si₃N₄ nanoparticles into Sn58Bi solder can enhance its synthetical performance, and 0.6 Wt.% is the best addition amount in our test setting.

In this paper, Si₃N₄ nanoparticles were incorporated into Sn58Bi solder, and the effects of different contents of Si₃N₄ nanoparticles on Sn58Bi solder were investigated from various aspects.

This study aims to review the current one-step electrodeposition of superhydrophobic coatings on metal surfaces.

One-step electrodeposition is a versatile and simple technology to prepare superhydrophobic coatings on metal surfaces.

Preparing superhydrophobic coatings by one-step electrodeposition is an efficient method to protect metal surfaces.

Even though there are several technologies, one-step electrodeposition still plays a significant role in producing superhydrophobic coatings.

This paper aims to present the design, fabrication and analysis of a wideband, enhanced gain 1 × 2 patch antenna array with a simple profile structure to meet the desired antenna traits, such as wide bandwidth, high gain and directional patterns expected for the upcoming fifth-generation (5G) wireless applications in the millimeter wave band. To enhance these parameters (bandwidth and gain), a new antenna geometry by using a T-junction power divider is presented.

The theory behind this paper is connected with advancements in the 5G communications related to antennas. The methodology used in this work is to design a high gain array antenna and to identify the best possible power divider to deliver the power in an optimized way. The design methodology adopts several steps like the selection of proper substrate material as per the design specification, size of the antenna as per the frequency of operation and application-specific environment condition. The simulation has been performed on the designed antenna in the electromagnetic simulation tool (high-frequency structure simulator [HFSS]), and optimization has been done with parametric analysis, and then the final array antenna model is proposed. The proposed array contains 2-patch elements excited by one port adapted to 50 Ω through a T-junction power divider. The 1 × 2 array configuration with the suggested geometry helps to improve the overall gain of the antenna, and the implementation of the T-junction power divider provides enhanced bandwidth. The proposed array designed using a 1.6 mm thick flame retardant substrate occupies a compact area of 14 × 12.14 mm².

The prototype of the array antenna is fabricated and measured to validate the design concept. A good agreement has been reached between the measured and simulated antenna parameters. The measured results confirm its wideband and high gain characteristics, covering 24.77–28.80 GHz for S₁₁= –10 dB with a peak gain of about 15.16 dB at 27.65 GHz.

The proposed antenna covers the bandwidth requirements of the 26 GHz n258 band (24.25–27.50 GHz) to be deployed in the UK and Europe. The suggested antenna structure also covers the federal communications commission (FCC)-regulated 28 GHz n261 band (27.5–28.35 GHz) to be deployed in America and Canada. The low profile, compact size, simple structure, wide bandwidth, high gain and desired directional radiation patterns confirm the applicability of the suggested array antenna for the upcoming 5 G wireless systems.