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The purpose of this paper is to establish a systemic yoyo model‐based explanation for the internal structure of atoms, which is totally different of the conventional ones.

The spin fields of systemic yoyos are used to explain the interactions between electric and magnetic fields and between elementary particles.

The concepts of potential pits (traps) and ramparts for electrons and those of nuclear, atomic, and molecular bonds are introduced. These concepts are employed successfully to describe the topological structure of atoms.

Other than providing a brand new model for the internal structure of atoms, this paper establishes a deeper understanding of the general systemic yoyo mode.

We compare two approaches of incorporating the long‐range Coulomb electron‐electron interaction into Monte Carlo simulations of bulk, degenerate GaAs, i.e., the semi‐classical approach of solving the Poisson equation self‐consistently, and the first order quantum mechanical treatment in which the electron‐plasmon interaction is included as an additional scattering mechanism. The critical issues involved in the semi‐classical, direct approach are the mesh size, charge assignment to the mesh nodes, and interpolation of the field at the particle location. All of these factors determine the stability of the system, the accuracy and computational time required in the calculation. The steady‐state electron drift velocity in bulk GaAs calculated using the direct, semi‐classical approach for the electron‐plasmon interaction is significantly less than the corresponding bulk drift velocity in the absence of the electron‐plasmon interaction. The alternative approach of treating the electron‐plasmon interaction as a scattering mechanism is attractive since it is computationally easier to include and is, at least to first order, quantum mechanically based. It is found that the calculated steady‐state electron drift velocity in bulk GaAs based on this model is affected in the opposite way, i.e., the velocity is greater than in the absence of the electron‐plasmon interaction. The cause of the discrepancy in the calculated results of the two approaches is not too surprising since they attack the problem from very different directions. Neither model can at present be considered complete. Further detailed investigations are required to achieve a better model for the electron‐plasmon interaction.

This paper aims at building a discharge model for the power cable bellows based on plasma energy deposition and analyzing the discharge ablation problem.

Aiming at the multiphysical mechanism of the discharge ablation process, a multiphysical field model based on plasma energy deposition is established to analyze the discharge characteristics of the power cable bellows. The electrostatic field, plasma characteristics, energy deposition and temperature field are analyzed. The discharge experiment is also carried out for result validation.

The physical mechanism of the bellows ablative effect caused by partial discharge is studied. The results show that the electric field intensity between the aluminum sheath and the buffer layer easily exceeds the pressure resistance value of air breakdown. On the plasma surface of the buffer layer, the electron density is about 4 × 1,019/m³, and the average temperature of electrons is about 3.5 eV. The energy deposition analysis using the Monte Carlo method shows that the electron range in the plasma is very short. The release will complete within 10 nm, and it only takes 0.1 s to increase the maximum temperature of the buffer layer to more than 1,000 K, thus causing various thermal effects.

Its physical process involves the distortion of electric field, formation of plasma, energy deposition of electrons, and abrupt change of temperature field.

The purpose of this paper is to reach two goals: one is to generalize the well‐studied theories of electricity and magnetism to the enrichment of deepened understanding of the general systemic yoyo model, and the other is to employ the established yoyo model to provide more refined explanations for some of the known experimental observations in physics.

The general structure and the field characteristics of the general systemic yoyo model are employed as the basis of our exploration in this paper. Then, methods of quantitative analysis are introduced to address some of the problems encountered.

Among several new results, many important concepts, such as ring‐shaped electric fields, cylinders of equal potential intensities, yoyo resistances, yoyo capacitors, etc. are introduced and studied in some detail. Several important Laws in electromagnetic theory, such as Ohm's law, Kirchhoff's laws, etc. are generalized to the case of the general systemic yoyo model. The refined theory is applied to provide theoretical explanations for some laboratory‐observed phenomena that cannot be well illustrated by either Faraday's theory of electromagnetic induction or Lenz's law.

Phenomena related to electricity and magnetism are explained the first time in history by using a unified model: the systemic yoyo model. At the same time, some well established Laws in physics are generalized to scenarios of this general mode with the hope that these new Laws can be applied equally well to natural and social sciences in the coming years.

This paper aims to present a new physically inspired meta-heuristic algorithm, which is called Plasma Generation Optimization (PGO). To evaluate the performance and capability of the proposed method in comparison to other optimization methods, two sets of test problems consisting of 13 constrained benchmark functions and 6 benchmark trusses are investigated numerically. The results indicate that the performance of the proposed method is competitive with other considered state-of-the-art optimization methods.

In this paper, a new physically-based metaheuristic algorithm called plasma generation optimization (PGO) algorithm is developed for solving constrained optimization problems. PGO is a population-based optimizer inspired by the process of plasma generation. In the proposed algorithm, each agent is considered as an electron. Movement of electrons and changing their energy levels are based on simulating excitation, de-excitation and ionization processes occurring through the plasma generation. In the proposed PGO, the global optimum is obtained when plasma is generated with the highest degree of ionization.

A new physically-based metaheuristic algorithm called the PGO algorithm is developed that is inspired from the process of plasma generation.

The results indicate that the performance of the proposed method is competitive with other state-of-the-art methods.

This study seeks to explain how a cybernetic system, the human brain, creates the cognitive models that are applied by physics to explain particular phenomena of the physical world, namely, the electrostatic force and the annihilation of matter and antimatter.

This study applies findings in cognitive psychology of vision, neuropsychology of the hemispheric mechanisms and quantum mechanics in order to explain how the electrostatic force operates at distance between two charged particles.

In addition to the quantum fields theory, which explains the electrostatic force by photons that carry this force between charged particles (and is related to the left‐hemispheric cognitive mechanism) a dual theory is suggested that explains this force by interchanging of features between particles (and is related to the right‐hemispheric cognitive mechanism).

Like Fidelman's previous studies, this too demonstrates that cybernetic considerations which use cognitive psychological, neuropsychological and physical‐knowledge can obtain testable and applicable physical theories.

A new quantum effect device which is capable of highly coherent electron emission is theoretically proposed and analysed. The new device works by using the potential induced accumulation layer at a heterointerface to produce dimensionally reduced electrons. These electrons tunnel through a heterobarrier ensuring that their energy is quantised in the direction of propagation. To avoid the problem of unquantised three dimensional electrons dominating the current the two dimensional electrons that tunnel through the barrier are replenished by electrons from two side contacts. A self‐consistent model is used to analyse the performance of the device and it is found that the new device performs very well, producing electrons with a very narrow energy spread in the direction of propagation. The current density/coherency combination is easily controlled by the applied bias and the device also offers the potential for ultra fast switching through the transition between coherent and incoherent states.

With the advent of sophisticated growth techniques such as Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition, the calculation of the energy boundstates and electron wave‐functions of the one‐electron Schrödinger equation has received a lot of attention over the last decade. With the more recent fabrication of quantum wires and dots, it seems now imperative to extend the boundstates calculation to systems containing only a few electrons. Hereafter, we investigate the effect of electron exchange and Coulomb interactions on the boundstates of a two‐electron system in a square quantum well. The technique is based on a general Alternating Direction Implicit algorithm ( T. Singh and M. Cahay, SPIE Vol. 1675, Quantum Wells and Superlattice Physics IV (1992), p.11) combined with a Fourier spectrum analysis of the two‐particle wavefunction correlation , <ψ(χ1,χ2;0)/ψ(χ1,χ2;τ)> , where χ1, χ2 are the coordinates of the two electrons. The precise location of the energy eigenvalues requires the appropriate use of window functions before calculating the Fourier transform of the correlation function. We also compare our results for the boundstate energies with those obtained using a first order time‐independent perturbation theory.

This paper aims to study the breakdown, oscillation and vanishing of the discharge channel and its influence on crater formation with simulation and experimental methods. The experiment results verified the effect of the oscillating characteristics of the discharge channel on the shape of the crater.

A mathematical model that considers the magnetohydrodynamics (MHD) and the discharge channel oscillation was established. The micro process of discharging based on magnetic-fluid coupling during electrical discharge machining (EDM) was simulated. The breakdown, oscillation and vanishing stage of the discharge channel were analyzed, and the crater after machining was obtained. Finally, a single-pulse discharge experiment during EDM was conducted to verify the simulation model.

During the breakdown of the discharge channel, the electrons move towards the center of the discharge channel. The electrons at the end diverge due to the action of water resistance, making the discharge channel appear wide at both ends and narrow in the middle, showing the pinch effect. Due to the mutual attraction of electrons and positive ions in the channel, the transverse oscillation of the discharge channel is shown on the micro level. Therefore, the position of the discharge point on the workpiece changes. The longitudinal oscillation in the discharge channel causes the molten pool on the workpiece to be ejected due to the changing pressure. The experimental results show that the shape of the crater is similar to that in the simulation, which verifies the correctness of the simulation results and also proves that the crater generated by the single pulse discharge is essentially the result of the interaction between transverse wave and longitudinal wave.

In this paper, the simulation of the discharge breakdown process in EDM was carried out, and a new mathematical model that considers the MHD and the discharge channel oscillation was established. Based on the MHD module, the discharge breakdown, oscillation and vanishing stages were simulated, and the velocity field and pressure field in the discharge area were obtained.

The purpose of this work is to study the capability of heuristic algorithms like genetic algorithm to estimate the electron transport parameters of the Gallium Arsenide (GaAs). Also, the paper provides a simple but complete electron mobility model for the GaAs based on the genetic algorithm that can be suitable for use in simulation, optimization and design of GaAs‐based electronic and optoelectronic devices.

The genetic algorithm as a powerful heuristic optimization technique is used to approximate the electron transport parameters during the model development.

The capability of the model to approximate the electron transport properties of Gallium Arsenide is tested using experimental and Monte Carlo data. Results show that the genetic algorithm based model can provide a reliable estimate of the electron mobility in Gallium Arsenide for a wide range of temperatures, concentrations and electric fields. Based on the obtained results, this paper shows that the genetic algorithm can be a useful tool for the estimation of the transport parameters of semiconductors.

For the first time, the genetic algorithm is used to calculate the electron transport parameters in Gallium Arsenide. A complete electron mobility model for a wide range of temperatures, doping concentrations, compensation ratios and electric fields is developed.