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This study aims to design and validate a theoretical model for capacitive imaging (CI) sensors that incorporates the interelectrode shielding and surrounding shielding electrodes. Through experimental verification, the effectiveness of the theoretical model in evaluating CI sensors equipped with shielding electrodes has been demonstrated.

The study begins by incorporating the interelectrode shielding and surrounding shielding electrodes of CI sensors into the theoretical model. A method for deriving the semianalytical model is proposed, using the renormalization group method and physical model. Based on random geometric parameters of CI sensors, capacitance values are calculated using both simulation models and theoretical models. Three different types of CI sensors with varying geometric parameters are designed and manufactured for experimental testing.

The study’s results indicate that the errors of the semianalytical model for the CI sensor are predominantly below 5%, with all errors falling below 10%. This suggests that the semianalytical model, derived using the renormalization group method, effectively evaluates CI sensors equipped with shielding electrodes. The experimental results demonstrate the efficacy of the theoretical model in accurately predicting the capacitance values of the CI sensors.

The theoretical model of CI sensors is described by incorporating the interelectrode shielding and surrounding shielding electrodes into the model. This comprehensive approach allows for a more accurate evaluation of the detecting capability of CI sensors, as well as optimization of their performance.

Adoption of integrated MOS based pseudo-resistor (PR) structures instead of using off-chip passive poly resistors for analog circuits in complementary metal oxide semiconductor technology (CMOS) is an area-efficient way for realizing larger time constants. However, issue of common-mode voltage shifting and excess dependency on the process and temperature variations introduce nonlinearity in such structures. So there is dire need to not only closely look for the origin of the problem with the help of a thorough mathematical analysis but also suggest the most suitable PR structure for the purpose catering broadly to biomedical analog circuit applications.

In this work, incremental resistance (IR) expressions and IR range for balanced PR (BPR) structures operating in the subthreshold region have been closely analyzed for broader range of process-voltage-temperature variations. All the post-layout simulations have been obtained using BSIM3V3 device models in 0.18 µm standard CMOS process.

The obtained results show that the pertinent problem of common-mode voltage shifting in such PR structures is completely resolved in scaled gate linearization and bulk-driven quasi-floating gate (BDQFG) BPR structures. Among all BPR structures, BDQFG BPR remarkably shows constant IR value of 1 TΩ over −1 V to 1 V voltage swing for wider process and temperature variations.

Various balanced PR design techniques reported in this work will help the research community in implementing larger time constants for analog-mixed signal circuits.

The PR design techniques presented in the present piece of work is expected to be used in developing tunable and accurate biomedical prosthetics.

The BPR structures thoroughly analyzed and reported in this work may be useful in the design of analog circuits specifically for applications such as neural signal recording, cardiac electrical impedance tomography and other low-frequency biomedical applications.

This study aims to focused on conducting a comprehensive assessment of the technology readiness level (TRL) of Iran’s oil field intelligence compared to other countries with similar oil reservoirs. The ultimate objective is to optimize oil extraction from this field by leveraging intelligent technology. Incorporating intelligent technology in oil fields can significantly simplify operations, especially in challenging-to-access areas and increase oil production, thereby generating higher income and profits for the field owner.

This study evaluates the level of maturity of present oil field technologies from the perspective of an intelligent oil field by using criteria for measuring the readiness of technologies. A questionnaire was designed and distributed to 18 competent oil industry professionals. Using weighted criteria, a mean estimate of oil field technical maturity was derived from the responses of respondents. Researchers evaluated the level of technological readiness for Brunei, Kuwait and Saudi Arabia’s oil fields using scientific studies.

None of the respondents believe that the intelligent oil field in Iran is highly developed and has a TRL 9 readiness level. The bulk of experts believed that intelligent technologies in the Iran oil industry have only reached TRL 2 and 1, or are merely in the transfer phase of fundamental and applied research. Clearly, Brunei, Kuwait and Saudi Arabia have the most developed oil fields in the world. In Iran, academics and executive and contracting firms in the field of intelligent oil fields are working to intelligently develop young oil fields.

This study explores the level of maturity of intelligent technology in one of Iran’s oil fields. It compares it to the level of maturity of intelligent technology in several other intelligent oil fields throughout the globe. Increasing intelligent oil fields TRL enables better reservoir management and causes more profit and oil recovery.