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The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties.

The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier.

The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation.

The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

The purpose of this paper is to study the effect of doping, annealing temperature and visible optical excitation on CuO-ZnO nanocomposites’ acetone sensing properties and introduce an attractive candidate for acetone detection at about room temperature.

ZnO nanoparticles doped with CuO were prepared by sol-gel method, and the structure and morphology were characterized via X-ray diffraction, scanning electron microscope, energy dispersive spectroscopy and Brunauer-Emmett-Teller. The photoelectric responses of CuO-ZnO nanocomposites to cetone under the irradiation of visible light were investigated at about 30°C. The photoelectric response mechanism was also discussed with the model of double Schottky.

The doping of CuO enhanced performance of ZnO nanoparticles in terms of the photoelectric responses and the gas response and selectivity to acetone of ZnO nanoparticles, in addition, decreasing the operating temperature to about 30ºC. The optimum performance was obtained by 4.17% CuO-ZnO nanocomposites. Even at the operating temperature, about 30ºC, the response to 1,000 ppm acetone was significantly increased to 579.24 under the visible light irradiation.

The sensor fabricated by 4.17% CuO-ZnO nanocomposites exhibited excellent acetone-sensing characteristics at about 30ºC. It is promising to be applied in low power and miniature acetone gas sensors.

In the present research, a new nanocomposite material of CuO-ZnO was prepared by Sol-gel method. The optimum gas sensing properties to acetone were obtained by 4.17% CuO-ZnO nanocomposites at about 30ºC operating temperature when it was irradiated by visible light with the wavelength more than 420 nm.

The purpose of this paper is modeling the effect of negative capacitance in the capacitance-voltage characteristic of the intergranular potential barrier of varistor structure.

The modeling of the capacitance-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents, and also takes into account the voltage drop on the intergranular interlayer of intergranular potential barrier.

The models and algorithms for calculating the capacitance-voltage characteristics of a single intergranular potential barrier with the use of the most established understanding used at the interpretation of the nonlinear conductivity intergranular barrier are developed. The results of the capacitance-voltage characteristics modeling correspond to the existing understanding of the electrical properties on the ac current varistor ceramics are based on zinc oxide. The model allows to predict the behavior of varistors on the alternating current (voltage).

It is established that the recharge of the surface localized states occurs when a voltage is applied to the varistor structure, it can lead to a relaxation decrease in the width of the potential barrier overcome by tunneling electrons in the field emission from the conduction band of the one crystallite in the conduction band of the other crystallite and thus to the current backlog of applied voltage on the phase (i.e. the expression of the negative capacitance effect).

The electromigration degradation model of nonlinear electrical properties of non‐uniform structures with intercrystallite potential barriers is developed. It allows connecting the increasing of near surfaces concentration of volume donors by their migration in electrical field at heating up structures by means of electrical current in the process of degradation. It results in experimentally observed deterioration varistoral properties, deterioration and asymmetrical deformation of currentvoltage characteristics during their exploitation.

The purpose of this paper is to investigate the effects of the sintering temperature on the microstructural, morphological and electrical characteristics of Zinc oxide (ZnO)-based varistors.

This study used a conventional method to design and produce ZnO varistors by sintering ZnO powder with small amounts of various metal oxides. Furthermore, the effect of sintering temperature on varistor properties of (Bi, Co, Cr, Sb, Mn)-doped ZnO ceramics was investigated in the range of 1280–1350 °C.

The obtained results showed an E_B value of 2109.79 V/cm, a V_gb value of 0.831 V and a nonlinear coefficient (α) value of 19.91 for sample sintered at temperature of 1300 °C. In addition, the low value of tan δ at low frequency range confirmed that the grain boundaries created in 1300 °C sintering temperature were obviously good.

Based on the previous research on the ZnO-based varistors, a thorough study was carried out on these components to improve their electrical characteristics. Thus, it is necessary that those varistors have low leakage current and low value of dissipation factor to ensure their good quality. High breakdown fields and nonlinearity coefficients are also required in such kind of components. The effect of sintering temperature on the varistor properties of the new compositions (zinc, bismuth, manganese, chrome, cobalt, antimony and silicon oxides)-doped ZnO ceramics was studied in the range of 1280–1350 °C. Also, the microstructure and the phase evolution of the samples sintered at various temperatures (1280 °C, 1300 °C, 1320 °C and 1350 °C) were investigated according to X-ray diffraction and scanning electron microscope measurements.

This paper aims to estimate the relationship between defect structure with gas concentration for use as a gas sensor. The change in defect concentration caused a shift in the Fermi level, which in turn changed the surface potential, which is manifested as the potentiometric response of the sensing element.

A new theoretical concept based on defect chemistry and band structure was used to explain the experimental gas response of a sensor. The theoretically simulated response was compared with experimental results.

Understanding the origin of potentiometric response, through the generation of defects and a corresponding shift in Fermi level of sensing surface, by the adsorption of gas. Through this understanding, the design of a sensor with improved selectivity and stability to a gas can be achieved by the study of defect structure and subsequent band analysis.

This paper provides information about various types of surface defects and numerical simulation of material with defect structure. The Fermi energy of the simulated value is correlated with the potentiometric sensor response.

Gas sensors are an integral part of vehicular and industrial pollution control. The theory developed shows the origin of response which can help in identifying the best sensing material and its optimum temperature of operation.

Low-cost, reliable and highly sensitive gas sensors are highly demanded which is fulfilled by potentiometric sensors.

The operating principle of potentiometric sensors is analyzed through electron band structure analysis. With the change in measured gas concentration, the oxygen partial pressure changes. This results in a change in defect concentration in the sensing surface. Band structure analysis shows that change in defect concentration is associated with a shift in Fermi level. This is the origin of the potentiometric response.

This paper aims to fabricate and characterize ZnO-based multilayer varistors.

Tape casting technique was utilized for preparation of multilayer varistors based on ZnO doped with Pr, Bi, Sb, Co, Cr, Mn and Si oxides. Scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) methods were used to study the microstructure, elemental and phase compositions, respectively, of the varistors. Dielectric properties were investigated by impedance spectroscopy. Current–voltage (I–U) dependences were measured to characterize nonlinear behavior of the fabricated varistors.

XRD, SEM and EDS studies revealed dense microstructure of ceramic layers with ZnO grains sized 1-4 μm surrounded by nanometric Bi-rich films, submicrometer Zn₇Sb₂O₁₂ spinel grains and needle-shaped Pr₃SbO₇ crystallites. Praseodymium oxide was found to be very effective as an additive restricting the ZnO grain growth. I–U characteristics of the fabricated multilayer varistors were nonlinear, with the nonlinearity coefficients of 23-27 and 19-51 for the lower and higher Pr₂O₃ content, respectively. The breakdown voltages were 60-150 V, decreasing with increasing sintering temperature.

Low-temperature cofired ceramics technology enables attaining a significant progress in miniaturization of electronic passive components. Literature concerning application of this technology for multilayer varistors fabrication is limited. In the present work, the results of XRD, SEM and EDS studies along with the I–U and complex impedance dependences are analyzed to elucidate the origin of the observed varistor effect. The influence of sintering temperature and Pr₂O₃-doping level was investigated.

The purpose of this study was to develop fabrication procedure of multilayer varistors based on doped ZnO and to investigate their microstructure and electrical properties.

Two ceramic compositions based on ZnO doped with Bi₂O₃, Sb₂O₃, CoO, MnO, Cr₂O₃, B₂O₃, SiO₂ and Pr₂O₃ were used for tape casting of varistor tapes. Multilayer varistors were prepared by stacking of several green sheets with screen printed Pt electrodes, isostatic lamination and firing at 1,050-1,100°C. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) studies were carried out to examine the microstructure and elemental composition of the varistors. Current-voltage characteristics were measured in the temperature range from −20 to 100°C.

The desired compact and fine-grained microstructure of multilayer varistors and nonlinear current-voltage characteristics were attained as a result of the applied fabrication procedure. The breakdown voltage of the varistors is 33-35 V and decreases slightly in the temperature range from −20 to 100°C. The nonlinearity coefficient changes from 14 to 23 with rising measurement temperature.

New improved formulations of varistor ceramic foils based on doped ZnO were developed using tape casting method and applied for fabrication of multilayer varistors with good electrical characteristics. The influence of temperature in the range from −20 to 100°C on the varistor parameters was studied.

To develop a silicon lateral Schottky rectifier with low forward voltage drop and low reverse leakage current while its breakdown voltage is significantly larger than that of a conventional Schottky rectifier.

A two‐dimensional device simulation has been used, to examine the effect lateral dual sidewall Schottky concept on the current‐voltage characteristics of a lateral Schottky rectifier on silicon‐on‐insulator. The Schottky contact consists of a low‐barrier metal and a high‐barrier metal.

Results show that, during forward bias, the low‐barrier Schottky (LBS) contact conducts resulting in a low forward voltage drop. During the reverse bias, the LBS contact is shielded by the depletion region of the high‐barrier Schottky contact resulting in a low reverse leakage current.

With this approach, silicon Schottky rectifiers with low power dissipation and improved breakdown voltage can be realized.

The proposed device has a large commercial potential as a low‐power high‐voltage switching device.

The purpose of this paper is to develop a numerical simulation method based on the transient upstream finite element method (FEM) and Schottky emission theory to reveal the distribution characteristics of space charge in oil-paper insulation.

The main insulation medium of the converter transformer in high voltage direct current transmission is oil-paper insulation. However, the influence of space charge is difficult to be fully considered in the insulation design and simulation of converter transformers. To reveal the influence characteristics of the space charge, this paper proposes a numerical simulation method based on Schottky emission theory and the transient upstream FEM. This method considers the influence of factors, such as carrier mobility, carrier recombination coefficient, trap capture coefficient and diffusion coefficient on the basis of multi-physics field coupling calculation of the electric field and fluid field.

A numerical simulation method considering multiple charge states is proposed for the space charge problem in oil-paper insulation. Meanwhile, a space charge measurement platform based on the electrostatic capacitance probe method for oil-paper insulation structure is built, and the effectiveness and accuracy of the numerical simulation method is verified.

A variety of models are calculated and analyzed by the numerical simulation method in this paper, and the distribution characteristics of the space charge and total electric field in oil-paper insulation medium with single-layer, polarity reversal of plate voltage and double-layer are obtained. The research results of this paper have the guiding significance for the engineering application of oil-paper insulation and the optimal design of converter transformer insulation.