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The work was aimed at preparation of green tapes based on a new material Bi_2/3CuTa₄O₁₂, to achieve spontaneously formation of an internal barrier layer capacitor (IBLC), fabrication of multilayer elements using low temperature cofired ceramics (LTCC) technology and their characterization.

The study focused on tape casting, lamination and co-sintering procedures and dielectric properties of Bi_2/3CuTa₄O₁₂ multilayer capacitors. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) studies of the ceramic elements were performed. Impedance spectroscopy was used for characterization of dielectric properties in the frequency range of 0.1 Hz to −2 MHz and in the temperature range from −55 to 400°C. DC conductivity was investigated in the temperature range 20 to 740°C.

SEM observations revealed a good compatibility of the applied commercial Pt paste with the ceramic layers. The EDS microanalysis showed a higher content of oxygen at grain boundaries. The dominant dielectric response, which was recorded in the low frequency range and at temperatures above 0°C, was attributed to grain boundaries. The dielectric response at low temperatures and/or high frequencies was related to grains. The fabricated multilayer capacitors based on Bi_2/3CuTa₄O₁₂ exhibited a high specific capacitance.

A new material Bi_2/3CuTa₄O₁₂ was applied for preparation of green ceramic tapes and utilized for fabrication of multilayer ceramic capacitors using the LTCC technology. This material belongs to the group of high permittivity nonferroelectric compounds with a complex perovskite structure of CaCu₃Ti₄O₁₂, that causes the spontaneously formation of IBLCs.

This paper aims to report on fabrication procedure and presents microstructure and dielectric behaviour of LiZn_0.92Cu_0.08PO₄ ceramic material with Li₂CO₃ as a sintering aid.

Substrates based on LiZn_0.92Cu_0.08PO₄ with Li₂CO₃ addition were prepared via solid-state synthesis, doping, milling, pressing and sintering. Characterization of the composition, microstructure and dielectric properties was performed using X-ray diffractometry, energy dispersive spectroscopy, scanning electron microscopy, impedance spectroscopy in the 100 Hz to 2 MHz range and time-domain spectroscopy in the 0.1–3 THz range.

Doped LiZnPO₄ ceramic, which exhibits a low dielectric constant of 5.9 at 1 THz and low sintering temperature of 800 °C, suitable for low temperature co-fired ceramics (LTCC) technology, was successfully prepared. However, further studies are needed to lower dielectric losses by optimising the doping level, synthesis and sintering conditions.

Search for new low dielectric constant materials applicable in LTCC technology and optimization of processing are essential tasks for developing modern microwave circuits. The dielectric characterization of doped LiZnPO₄ ceramic in the terahertz range, which was performed for the first time, is crucial for potential millimetre-wave applications of this substrate material.

The purpose of this work was to characterize NiMn₂O₄ spinel-based thermistor powder, to use it in screen printing technology to fabricate temperature sensors, to study their performance for different sintering temperatures of thermistor layer, with and without insulative cover, as well as to investigate stability of the fabricated thermistors and their applicability in water quality monitoring.

After the characterization of starting NiMn₂O₄ spinel-based thermistor powder, it was converted to thick film paste which was screen printed on alumina substrate. Thermistor layers were sintered at four different sintering temperatures: 980°C, 1050°C, 1150°C and 1290°C. An interdigitated pattern of Ag-Pd conductive layer was used to reduce the resistance. Temperature-resistance characteristics were investigated in air and water, with and without insulative cover atop the thermistor layer. Stability of the fabricated thermistors after aging at 120°C for 300 h was also examined.

Thick film NiMn₂O₄ spinel thermistors, prepared by screen printing and sintering in the temperature range 980°C–1290°C, exhibited good negative temperature coefficient (NTC) characteristics in the temperature range −30°C to 145°C, including high temperature coefficient of resistance, good stability and applicability in water.

This study explores the range of sintering temperature that can be applied for NiMn₂O₄ thermistor thick films without compromising on the temperature sensing performance in air and water, as well as stability of the thermistors after aging at elevated temperatures.

The purpose of this study was to develop fabrication procedure of multilayer varistors based on doped ZnO and to investigate their microstructure and electrical properties.

Two ceramic compositions based on ZnO doped with Bi₂O₃, Sb₂O₃, CoO, MnO, Cr₂O₃, B₂O₃, SiO₂ and Pr₂O₃ were used for tape casting of varistor tapes. Multilayer varistors were prepared by stacking of several green sheets with screen printed Pt electrodes, isostatic lamination and firing at 1,050-1,100°C. Scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) studies were carried out to examine the microstructure and elemental composition of the varistors. Current-voltage characteristics were measured in the temperature range from −20 to 100°C.

The desired compact and fine-grained microstructure of multilayer varistors and nonlinear current-voltage characteristics were attained as a result of the applied fabrication procedure. The breakdown voltage of the varistors is 33-35 V and decreases slightly in the temperature range from −20 to 100°C. The nonlinearity coefficient changes from 14 to 23 with rising measurement temperature.

New improved formulations of varistor ceramic foils based on doped ZnO were developed using tape casting method and applied for fabrication of multilayer varistors with good electrical characteristics. The influence of temperature in the range from −20 to 100°C on the varistor parameters was studied.

The paper aims to report on fabrication procedure and present microstructure and dielectric behavior of multilayer porous low-temperature cofired ceramic (LTCC) structures based on glass-cordierite and glass-alumina.

The LTCC structures were created as multi-layered composites with dense external layers and inner layers with intentionally introduced porosity. Two preparation methods were applied – subsequent casting of both kinds of slurries and conventional isostatic lamination of dried green tapes arranged in the designed order. Optical microscope observations were carried out to analyze the microstructure of green and fired multilayer structures and pore concentration. To evaluate the adhesion strength of the composite layers, pull test was performed. Dielectric behavior of the composites was studied in the frequency range 50 kHz-2 MHz.

The fabricated porous LTCC structures showed dielectric constant of 3-5.6. The lowest dielectric constant was attained for glass-cordierite composite made by the conventional tape casting/lamination/firing method from slurry with 50 per cent graphite content. The samples prepared using multiple casting were of worse quality than those fabricated in conventional process, contained irregular porosity, showed tendency for deformation and delamination and exhibited a higher dielectric constant.

Search for new low dielectric constant materials applicable in LTCC technology and new methods of their fabrication is an important task for development of modern microwave circuits.

This paper aims to present the comparative study on the composition, microstructure and dielectric behavior of a group of new nonferroelectric high-permittivity A_2/3CuTa₄O₁₂ (A = Y, Nd, Sm, Gd, Dy or Bi) ceramics.

The materials under investigation were synthesized by solid-state reaction method and sintered at 1,120-1,230°C. Dielectric properties were investigated in the temperature range from −55 to 740°C at frequencies 10 Hz to 2 MHz. Microstructure, elemental composition and phase composition of the ceramics were examined by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) methods. DC conductivity was studied in the temperature range 20-740°C.

XRD analysis revealed peaks corresponding to Cu₂Ta₄O₁₂ along with small amounts of secondary phases based on tantalum oxides. Impedance spectroscopic data and the results of SEM and EDS studies imply the spontaneous formation of internal barrier layer capacitors in the investigated materials. Two steps can be distinguished in the dielectric permittivity versus frequency plots. The low-frequency step of 1,000-100,000 is assigned to grain boundary barrier layer effect, while the high-frequency one of 34-46 is related to intrinsic properties of grains.

Search for new high-permittivity capacitor materials is important for the progress in miniaturization and integration scale of electronic passive components. The paper reports on processing, microstructure, microanalysis studies and dielectric properties of a group of novel nonferroelectric materials with the perovskite structure of CaCu₃Ti₄O₁₂ and the general formula A_2/3CuTa₄O₁₂, being spontaneously formed internal barrier layer capacitors.

This paper aims to fabricate and characterize ZnO-based multilayer varistors.

Tape casting technique was utilized for preparation of multilayer varistors based on ZnO doped with Pr, Bi, Sb, Co, Cr, Mn and Si oxides. Scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) methods were used to study the microstructure, elemental and phase compositions, respectively, of the varistors. Dielectric properties were investigated by impedance spectroscopy. Current–voltage (I–U) dependences were measured to characterize nonlinear behavior of the fabricated varistors.

XRD, SEM and EDS studies revealed dense microstructure of ceramic layers with ZnO grains sized 1-4 μm surrounded by nanometric Bi-rich films, submicrometer Zn₇Sb₂O₁₂ spinel grains and needle-shaped Pr₃SbO₇ crystallites. Praseodymium oxide was found to be very effective as an additive restricting the ZnO grain growth. I–U characteristics of the fabricated multilayer varistors were nonlinear, with the nonlinearity coefficients of 23-27 and 19-51 for the lower and higher Pr₂O₃ content, respectively. The breakdown voltages were 60-150 V, decreasing with increasing sintering temperature.

Low-temperature cofired ceramics technology enables attaining a significant progress in miniaturization of electronic passive components. Literature concerning application of this technology for multilayer varistors fabrication is limited. In the present work, the results of XRD, SEM and EDS studies along with the I–U and complex impedance dependences are analyzed to elucidate the origin of the observed varistor effect. The influence of sintering temperature and Pr₂O₃-doping level was investigated.

This paper aims to investigate different properties of synthesized perovskite Sm_0.9Sr_0.1CoO_3-δ and its potential for application in potentiometric oxygen sensors.

The powder was obtained through solid-state reaction method and characterized by thermogravimetric/differential thermal analyzer and X-ray diffraction. It was used for both making a paste and pressing into rods for sintering. The prepared paste was deposited on alumina and yttria-stabilized zirconia substrates, by screen printing. Thick film conductivity, bulk conductivity and Seebeck coefficient of sintered rods were measured as a function of temperature. An oxygen concentration cell was fabricated with the screen-printed perovskite material as electrodes.

Electrical conductivity of the bulk sample and thick film increases with the increase in temperature, showing semiconductor-like behavior, which is also indicated by relatively high values of the measured Seebeck coefficient. Estimated values of the activation energy for conduction are found to be of the same magnitude as those reported in the literature for similar composition. An investigation of Nernstian behavior of the fabricated cell confirmed that Sm_0.9Sr_0.1CoO_3-δ is a promising material for application in oxygen potentiometric sensors.

Gas sensor research is focused on the development of new sensitive materials. Although there is scarce information on SmCoO_3-δ in the literature, it is mostly investigated for fuel cell applications. Results of this study imply that Sr-doped SmCoO_3-δ is a good candidate material for oxygen potentiometric sensor.

The purpose of this paper is to present fabrication process of volatile organic compounds (VOCs) sensors based on polypyrrole material deposited on different substrates and to show and compare the responses of the produced sensors to different VOCs.

Polypyrrole sensing layers were prepared by in situ chemical polymerisation on two different substrates: alumina and poly(ethylene terephthalate) (PET). The time of the polymerisation was varied. After film deposition, an interdigitated electrode was screen-printed on the material deposited on the substrate.

It was demonstrated that both polymerisation time and substrate type provide means to vary the sensitivity of polypyrrole-based sensors to VOCs.

VOCs, which are released in manufacturing or use of various products and materials, pose a threat to the environment and human health. Therefore, measures must be taken to control their concentration both in indoor and outdoor air.

Deposition of a conductive polymer film on the substrate via in situ chemical polymerisation followed by screen-printing of an interdigitated electrode on the polymer surface offers a fast and an effective method of chemiresistor-type sensor fabrication.