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This chapter introduces the sociologically informed concept of cultural manspreading, which is used to critically examine how gender and power operate in relation to doping and image and performance enhancing drug (IPED) use. Though not exclusively, the chapter centres on the online doping context and how men and women in different forums navigate their doping lifestyles and identities. By focusing on the online doping context, the chapter brackets not only the focus on sport and fitness that has dominated much research, but also the physical dimension that have been at the heart of manspreading in public discourse. Thereby the concept is theorized for wider interpretations, including analysis of men dominating spatial, social and sexual aspects/domains of doping subcultures to the detriment of women or subordinate men. Though doping subcultures are steeped in a masculinity that prioritizes muscular masculinities and construct men as experts and sources of knowledge about doping, the chapter also illustrates how both men and women sometimes play into and challenge such patterns and gender dynamics. Indeed, at times, women's presence in different doping spaces can be a challenge to the default male position. Further, by introducing women-only doping forums the chapter argues that women can begin to debate and share their experiences uninterrupted, developing their own store of knowledge, and setting the female body and experience as default. This supports the idea of a gradual formation of a sis-science doping culture.

This chapter concludes the volume. This is done in two capacities. First, the contributing chapters within in each theme are brought together through a reflexive discussion on current debates on anti-doping approaches, health and risk, doping arenas and communities, and the gendering of doping. Second, the interrelationships between the themes are discussed, pointing to new research directions.

This chapter introduces the main aims and ambition with the anthology, which is to bring together research from diverse perspectives on doping and Image and Performance Enhancing Drug (IPED) use. The chapter highlights existing but often backgrounded links between sport and fitness doping research and present a re-reading of the cultural history of doping through which simplistic divisions, such as that between sport and fitness, are deconstructed. Further, by unbinding the hegemonic divide between sports doping and fitness doping, new insights (and themes) concerning anti-doping, health and risk, new emerging doping spaces and the gendering of this field of research are brought to the fore. These themes are then used as point of departure when introducing the different chapters and scholars that contribute to the volume at hand.

Boundary limited transport in small compound semiconductor devices is studied within the self‐consistent Monte Carlo method. New stable microscopic models fully accounting for stochastic carrier exchange at boundaries have been developed for ohmic, tunneling, and Schottky barrier boundaries. These new models are demonstrated with applications to the one‐dimensional GaAs resistor, N+‐N‐N+ diode and the N+‐N Schottky diode.

During the operation of Wendelstein 7-X (W7-X), any mechanical disturbance such as stick-slip may cause quenching of superconducting (SC) coils. The friction behavior of MoS₂ lubrication (thin film) for narrow support elements between the SC coils in W7-X is rather important, as there is a design requirement for a coefficient of friction (COF) 0.05 between the sliding surfaces to control the stress contribution (from friction).

The author has carried out intensive calibrations or verifications using verified models considering previous friction tests on various samples which measured the COF in 4.2 K, 77 K and room temperature conditions (at high vacuum) to simulate the actual working condition.

The author has given useful explanations and diagnosis for previous anomalous scattered data. To improve the performance of MoS₂, the author has predicted its better COF (0.002 via tuning of the activation volume), which could be a superlubricating state for MoS₂ thin films considering the long-term operation requirement W7-X.

In this paper, the author has adopted Eyring’s approach to predict the low COF (0.002 via tuning of the activation volume), which could be a superlubricating state for MoS₂ thin films considering the long-term operation requirement W7-X. Finally, some recent progresses about the possible few-layer MoS₂ role in the electromagnetic loads have been provided.

This study aims to investigate the effect of V doping on the microstructure, chemical stability, mechanical and vacuum tribological behavior of sputtered MoS₂ coatings.

The MoS₂-V coatings are fabricated via tuning V target current by magnetron sputtering technique. The structural characteristic and elemental content of the coatings are measured by field emission scanning electron microscopy, X-ray diffractometer, electron probe X-ray micro-analyzer, Raman, X-ray photoelectron spectroscopy, high resolution transmission electron microscope and energy dispersive spectrometer. The hardness of the deposited coatings are tested by a nanoindentation technique. The vacuum tribological properties of MoS₂-V coatings are studied by a ball-on-disc tribometer.

Introducing V into the MoS₂ coatings results in a more compact microstructure. The hardness of the coatings increases with the doping of V. The MoS₂-V coating deposited at a current of 0.2 A obtains the lowest friction coefficient (0.043) under vacuum. As the amount of V doping increases, the wear rate of the coating decreases first and then increases, among which the coating deposited at a current of 0.5 A has the lowest wear rate of 2.2 × 10–6 mm³/N·m.

This work elucidates the role of V doping on the lubrication mechanism of MoS₂ coatings in a vacuum environment, and the MoS₂-V coating is expected to be applied as a solid lubricant in space environment.

The purpose of this paper is to investigate the structural, electronic and optical properties of pure zinc oxide (ZnO) and transition metal (Tm)-doped ZnO using Tm elements from silver (Ag) and copper (Cu) by a first-principles study based on density functional theory (DFT) as implemented in the pseudo-potential plane wave in CASTEP computer code.

The calculations based on the generalized gradient approximation for Perdew-Burke-Ernzerhof for solids with Hubbard U (GGA-PBEsol+U) were performed by applying Hubbard corrections U_d = 5 eV for Zn 3d state, U_p = 9 eV for O 2p state, U_d = 6 eV for Ag 4d state and U_d = 9.5 eV for Cu 3d state. The crystal structure used in this calculation was hexagonal wurtzite ZnO with a space group of P63mc and supercell 2 × 2 × 2.

The total energy was calculated to determine the best position for Ag and Cu dopants. The band structures and density of states show that Tm-doped ZnO has a lower bandgaps value than pure ZnO because of impurity energy levels from Ag 4d and Cu 3d states. In addition, Ag-doped ZnO exhibits a remarkable enhancement in visible light absorption over pure ZnO and Cu-doped ZnO because of its lower energy region and extended wavelength spectrum.

The results of this paper are important for the basic understanding of the 3d and 4d Tm doping effect ZnO and have a wide range of applications in designing high-efficiency energy harvesting solar cells.

The Monte‐Carlo particle model is a technique of simulating small semiconductor devices. It consists briefly of following the detailed transport histories of individual carriers, their time of free flight and consequent scattering chosen by a random number technique. A description of the method is given. The method has proved itself successful in semiconductor analysis, and as an example of its application we are using it to study the influence the epitaxial doping has on the performance of field‐effect transistors. We are comparing a transistor with an epitaxially grown active layer, with one with an ion implanted active layer and with an ideal device with an abrupt transition between the epilayer and the substrate. The cut‐off bias for ideal transistor is found to be more sharply defined than for the other two types of transistors. The spatial distribution of the carriers follows roughly the doping profile near the source. Underneath the gate the peak of the carrier density is pushed further down and into the substrate as the gate bias increases. This peak also weakens as the gate bias rises, and vanishes at, and beyond cut‐off. In the high field region after the gate the upper valleys population increases with increased drain bias and decreases with increased gate bias. The power gain and the y‐parameters are examined for all devices, both near pinch‐off and for no external gate bias. In both cases the ion implanted transistor shows the greatest gain. This transistor also exhibits the lowest minimum noise figure.

The purpose of this paper is to assess the institutional mechanisms for combating doping in high-level sport, including the trend toward using legalistic frameworks, and how they contribute to notions of deviance.

A historical approach informed by recent criminological adaptations of genealogy was utilized, using primary and secondary sources.

Three time periods involving distinct frameworks for combating doping were identified, each with their own advantages and limitations: pre-1967, post-1967 up until the creation of the World Anti-Doping Agency in 1999, and post-1999.

This study contextualizes the recent legalistic turn toward combating doping in sport, bringing greater understanding to the limitations of present anti-doping practices.

Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues.

In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile.

These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices.

A general 3D extension in the case where no symmetry exists can be considered for further developments.

The paper strongly simplify and ease the optimization and design of any PN junction.

This paper provides a novel method for electric field distribution analysis.