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Article
Publication date: 7 December 2020

Michał Mazur, Roman Pastuszek, Damian Wojcieszak, Danuta Kaczmarek, Jarosław Domaradzki, Agata Obstarczyk and Aneta Lubanska

Indium tin oxide (ITO) is a material belonging to the group of transparent conductive oxides, which are widely used in many fields of technology including optoelectronics and…

Abstract

Purpose

Indium tin oxide (ITO) is a material belonging to the group of transparent conductive oxides, which are widely used in many fields of technology including optoelectronics and photovoltaics. However, the properties of ITO thin films depend on many factors. Therefore, the aim of the study was thorough investigation of the properties of sputtered ITO thin films of various thicknesses.

Design/methodology/approach

ITO coatings were deposited by magnetron sputtering in pure argon atmosphere using ceramic ITO target. Various deposition times resulted in obtaining thin films with different thickness, which had significant influence on the optoelectronic properties of deposited coatings. In this work the results of investigation of structural, surface, optical and electrical properties were presented.

Findings

Increase of the coating thickness caused change of the microstructure from amorphous to nanocrystalline and occurrence of grains with a size of 40 to 60 nm on their surface. Moreover, the fundamental absorption edge was red-shifted, whereas the average transmission in the visible wavelength range remained similar. Increase of the thickness caused considerable decrease of the sheet resistance and resistivity. It was found that even thin films with a thickness of 10 nm had antistatic properties.

Originality/value

The novelty and originality of presented work consists in, among other, determination of antistatic properties of ITO thin films with various sheet resistances that are in the range typical for dielectric and semiconducting material. To date, there are no reports on such investigations in the literature. Reported findings might be very helpful in the case of, for example, construction of transparent antireflective and antistatic multilayers.

Article
Publication date: 1 August 2016

Kazimierz Drabczyk, Jaroslaw Domaradzki, Grazyna Kulesza-Matlak, Marek Lipinski and Danuta Kaczmarek

The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO…

Abstract

Purpose

The purpose of this paper was investigation and comparison of electrical and optical properties of crystalline silicon solar cells with ITO or TiO2 coating. The ITO, similar to TiO2, is very well transparent in the visible part of optical radiation; however, its low resistivity (lower that 10-3 Ohm/cm) makes it possible to use simultaneously as a transparent electrode for collection of photo-generated electrical charge carriers. This might also invoke increasing the distance between screen-printed metal fingers at the front of the solar cell that would increase of the cell’s active area. Performed optical investigation showed that applied ITO thin film fulfill standard requirements according to antireflection properties when it was deposited on the surface of silicon solar cell.

Design/methodology/approach

Two sets of samples were prepared for comparison. In the first one, the ITO thin film was deposited directly on the crystalline silicon substrate with highly doped emitter region. In the second case, the TCO film was deposited on the same type of silicon substrate but with additional ultrathin SiO2 passivation. The fingers lines of 80 μm width were then screen-printed on the ITO layer with two different spaces between fingers for each set. The influence of application of the ITO electrode and the type of metal electrodes patterns on the electrical performance of the prepared solar cells was investigated through optical and electrical measurements.

Findings

The electrical parameters such as short-circuit current (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency were determined on a basis of I-V characteristics. Short-circuit current density (Jsc) was equal to 32 mA/cm2 for a solar cell with a typical antireflection layer and 31.5 mA/cm2 for the cell with ITO layer, respectively. Additionally, electroluminescence of prepared cells was measured and analysed.

Originality/value

The influence of the properties of ITO electrode on the electrical performance of crystalline silicon solar cells was investigated through complex optical, electrical and electroluminescence measurements.

Details

Microelectronics International, vol. 33 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

Article
Publication date: 3 August 2015

Kazimierz Drabczyk, Jaroslaw Domaradzki, Piotr Panek and Danuta Kaczmarek

The purpose of this paper was the investigation of transparent conducting oxide (TCO) applied as an additional part of front metal electrode of crystalline silicon solar cell…

Abstract

Purpose

The purpose of this paper was the investigation of transparent conducting oxide (TCO) applied as an additional part of front metal electrode of crystalline silicon solar cell. Transparent conducting oxides are widely used as counter electrodes in a wide range of electronics and optoelectronics applications, e.g. flat panel displays. The most important optical and electrical requirements for TCOs are high optical transmittance and low resistivity. This low resistivity might invoke the possibility of increasing the distance between the fingers in the solar cell front electrode, thus decreasing the total area covered by metal and decreasing the shadowing loss.

Design/methodology/approach

In the present work, thin films of indium-tin-oxide (ITO) as a transparent counter electrodes, were evaporated on the surface of silicon n+-p junction structures used in solar cells. The influence of the properties of ITO electrode on the electrical performance of prepared solar cells was investigated through optical and electrical measurements. The discussion on the influence of deposition conditions of the TCO films on recombination of the photogenerated electrical charge carriers and solar cell series resistance was also included.

Findings

In this work, the fingers lines 100 μm width were screen-printed on the c-Si wafer with ITO layer. Monocrystalline silicon 25 cm 2,200-μm-thick wafers, were used for this testing. The usefulness of the ITO films as antireflection coating was discussed as well. It is commonly known that electrical performance of solar cells is limited by surface passivation. Despite this, the obtained results for ITO-Si structures showed relatively high value of short circuit current density (Jsc) up to 33 mA/cm2.

Originality/value

Our experiments confirmed the potential of application of ITO as anti-reflection coating (ARC) layer and according to their low resistivity possible use as a functional counter electrodes in photovoltaic structures.

Details

Microelectronics International, vol. 32 no. 3
Type: Research Article
ISSN: 1356-5362

Keywords

Book part
Publication date: 5 December 2008

Jeffrey Pomerantz, Songphan Choemprayong and Lori Eakin

This chapter traces the history of digital libraries (DLs) in the United States through the funding sources that have supported DL research and development over the past decade…

Abstract

This chapter traces the history of digital libraries (DLs) in the United States through the funding sources that have supported DL research and development over the past decade and a half. A set of related questions are addressed: How have the mission and goals of funding agencies affected the types of projects that have been funded? What have been the deliverables from funded projects and how have the goals of the funding agencies shaped those deliverables? Funding agencies have exerted strong influence over research and development in DLs, and different funding agencies have funded different types of projects, with varying sets of concerns for driving the various fields that feed into DLs. This chapter will address the impact that DL funding has had on the development of research in the field of Library and Information Science, as well as on the practice of librarianship.

Details

Influence of Funding on Advances in Librarianship
Type: Book
ISBN: 978-1-84855-373-6

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