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Numerous types of shunt active power filters have been proposed in many papers. The classification of these filters depends on various points of view. However, every type of a shunt active filter, which compensates non‐active component of load current, irrespective of the method used to detect this component and control strategies of the filter, should keep supply source current equal to active current of a load‐and‐filter circuit. This goal can be achieved in many ways, using various structures of active filters. But different realizations of filters cause differences in their properties. This paper, which is meant to serve as a review and synthesis of earlier work, shows some possibilities of forming of single‐phase shunt active filter behaviour. The following active filter properties are discussed: operation with an immediate reaction in the supplying source branch to a load current change, and with the reaction only once in each supplying source cycle; regulation by the filter of the non‐active current component of fundamental frequency; active filtering and simultaneous feeding of DC load with stabilizing DC voltage; operation with stabilization of supplying source current amplitude; reducing filter switching frequency; and reducing current distortions in the supplying source branch. All the waveforms presented were produced using a computer simulation method.

Multi‐level diode‐clamped inverters have the challenge of capacitor voltage balancing when the number of DC‐link capacitors is three or more. On the other hand, asymmetrical DC‐link voltage sources have been applied to increase the number of voltage levels without increasing the number of switches. The purpose of this paper is to show that an appropriate multi‐output DC‐DC converter can resolve the problem of capacitor voltage balancing and utilize the asymmetrical DC‐link voltages advantages.

A family of multi‐output DC‐DC converters is presented in this paper. The application of these converters is to convert the output voltage of a photovoltaic (PV) panel to regulate DC‐link voltages of an asymmetrical four‐level diode‐clamped inverter utilized for domestic applications. To verify the versatility of the presented topology, simulations have been directed for different situations and results are presented. Some related experiments have been developed to examine the capabilities of the proposed converters.

The three‐output voltage‐sharing converters presented in this paper have been mathematically analysed and proven to be appropriate to improve the quality of the residential application of PV by means of four‐level asymmetrical diode‐clamped inverter supplying highly resistive loads.

This paper shows that an appropriate multi‐output DC‐DC converter can resolve the problem of capacitor voltage balancing and utilize the asymmetrical DC‐link voltages advantages and that there is a possibility of operation at high‐modulation index despite reference voltage magnitude and power factor variations.

Estimation of solar cell parameters, mathematical modeling and the actual performance analysis of photovoltaic (PV) cells at various ecological conditions are very important in the design and analysis of maximum power point trackers and power converters. This study aims to propose the analysis and modeling of a simplified three-diode model based on the manufacturer’s performance data.

A novel technique is presented to evaluate the PV cell constraints and simplify the existing equation using analytical and iterative methods. To examine the current equation, this study focuses on three crucial operational points: open circuit, short circuit and maximum operating points. The number of parameters needed to estimate these built-in models is decreased from nine to five by an effective iteration method, considerably reducing computational requirements.

The proposed model, in contrast to the previous complex nine-parameter three-diode model, simplifies the modeling and analysis process by requiring only five parameters. To ensure the reliability and accuracy of this proposed model, its results were carefully compared with datasheet values under standard test conditions (STC). This model was implemented using MATLAB/Simulink and validated using a polycrystalline solar cell under STC conditions.

The proposed three-diode model clearly outperforms the earlier existing two-diode model in terms of accuracy and performance, especially in lower irradiance settings, according to the results and comparison analysis.

Models of power semiconductor devices for use in circuit simulators need to take account of effects which can be neglected in low power device models; they then become very complex and difficult to parameterise. The power PIN diode model described in this paper demonstrates how the use of empirically derived look‐up tables can simplify the characterisation problem and how non quasi‐static effects can be incorporated

The purpose of this paper is to propose a simple electrothermal model of GaN Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory-made devices is proved.

The compact electrothermal model of this device has the form of a subcircuit for simulation program with integrated circuit emphasis. This model takes into account influence of a change in ambient temperature in a wide range as well as influence of self-heating phenomena on dc characteristics of laboratory-made GaN Schottky diodes. The method of model parameters estimation is described.

It is shown that temperature influences fewer characteristics of GaN Schottky diodes than classical silicon diodes. The discussed model accurately describes properties of laboratory made GaN Schottky diodes. Additionally, the measured and computed characteristics of these diodes are shown and discussed.

The presented model together with the results of measurements and computations is dedicated only to laboratory-made GaN Schottky diodes.

The presented investigations show that characteristics of laboratory-made GaN Schottky diodes visibly change with temperature. These changes can be correctly estimated using the compact electrothermal model proposed in this paper. The correctness of this model is proved for four structures of such diodes characterised by different values of structure area and a different assembly process.

Votage source converter (VSC) based or current source converter (CSC) based shunt active power filter (SAPF)? It is the main question in harmonic elimination project using SAPF.This paper presents some criteria based on which the designer can decide which type of filter is more suitable for implementation of the project according to the nature and characteristics of the project.

Owing to the importance of cost and power losses criteria, relevant equations will be formulated and comparative analysis will be carried out between conventional structures based on CSC or VSC. For validation of analyses, simulation results have been studied in the MATLAB–SIMULINK environment.

Simulation results have examined two important criteria of power losses and costs. Although the results show the superiority of VSSAPF to CSSAPF in both criteria, this comparison is performed in a general and conventional condition. Using third-order filters of inductive-capacitive-inductive (LCL) type in VSSAPF, using insulated-gate bipolar transistor (IGBT) with reverse-voltage blocking ability in CSSAPF, which eliminates the need to use series diodes, and the use of superconducting technology in the DC-side endpoint in CSSAPF, not only reduce the difference of cost and losses in two schemes but also may lead to the lower costs and losses in CSSAPF than VSSAPF.

This paper is the result of many years working on active power filter and can be useful for engineers who are engaged in industrial projects.

This paper aims to propose a simple, derivative-free novel method named as Nelder–Mead optimization algorithm to estimate the unknown parameters of the photovoltaic (PV) module considering the environmental conditions.

At a particular temperature and irradiation, experimental current-voltage (I-V) and power-voltage (P-V) characteristics are drawn and considered as a reference model. The PV system model with unknown model parameters is considered as the adaptive model whose unknown model parameters are to be adapted so that the simulated characteristics closely matches with the experimental characteristics. A single diode (Rsh) model with five unknown model parameters is considered here for the parameter estimation.

The key advantages of this method are that parameters are estimated considering environmental conditions. Experimental characteristics are considered for parameter estimation which gives accurate results. Parameters are estimated considering both I-V and P-V curves as most of the applications demand extraction of the actual power from the PV module.

The proposed model is compared with other three well-known models available in the literature considering various statistical errors. The results show the superiority of the proposed model with a minimum error for both I-V and P-V characteristics.

Analytical determination of harmonic components of current in electric circuits containing semiconductor converters with the use of a small parameter method (SPM) in frequency domain. The paper aims to discuss these issues.

A SPM realized in frequency domain was used in the analytical analysis of electric circuits with semiconductor converters. An automated method of formation of orthogonal harmonic components of electrical values on the basis of discrete convolution algorithm was used to provide the possibility of realization of calculation in frequency domain. A nonlinear characteristic of a semiconductor converter was presented by the method of numerical approximation. A numerical structured simulation method was applied to determination of the reference values of current in the analyzed circuit. Laws of theoretical electrical engineering were used for formation of the equations of voltage balance in the circuit with a nonlinear element.

It is shown that application of a SPM with its realization in frequency domain enables significant simplification of the process of the analysis of electric circuits with semiconductor converters in an analytical form and facilitation of calculation automation. Analytical and numerical calculation of a circuit with a diode under active-inductive load demonstrated efficiency and sufficient accuracy of the proposed method. It is shown that increase of the order of approximating polynomial and of the number of the analyzed harmonics provides the improvement of the accuracy of numerical calculations.

The results of the work can be used in calculation of electrotechnical devices containing semiconductor appliances and electric devices with nonlinear characteristics. Moreover, the obtained results enable studying the processes of compensation of current higher harmonics in electric networks with a nonlinear load containing semiconductor converters.

For the first time it was proposed to apply a SPM with its realization in frequency domain to the analysis of nonlinear electric circuits. The significance of the paper consists in the fact that the offered method makes it possible to carry out both circuit analytical and numerical analysis with the possibility of its automation.

This study aims to regarding the application of traditional pulse frequency modulation control full-bridge LLC resonant converters in wide output voltage fields such as on-board chargers, there are issues with wide frequency adjustment ranges and low conversion efficiency.

To address these issues, this paper proposes a fixed-frequency pulse width modulation (PWM) control strategy for a full-bridge LLC resonant converter, which adjusts the gain by adjusting the duty cycle of the switches. In the full-bridge LLC converter, the two switches of the lower bridge arm are controlled by a fixed-frequency and fixed duty cycle, with their switching frequency equal to the resonant frequency, whereas the two switches of the upper bridge arm are controlled by a fixed-frequency PWM to adjust the output voltage. The operation modes of the converter are analyzed in detail, and a mathematical model of the converter is established. The gain characteristics of the converter under the fixed-frequency PWM control strategy are deeply analyzed, and the conditions for implementing zero-voltage switching (ZVS) soft switching in the converter are also analyzed in detail. The use of fixed-frequency PWM control simplifies the design of resonant parameters, and the fixed-frequency control is conducive to the design of magnetic components.

According to the fixed-frequency PWM control strategy proposed in this paper, the correctness of the control strategy is verified through simulation and the development and testing of a 500-W experimental prototype. Test results show that the primary side switches of the converter achieve ZVS and the secondary side rectifier diodes achieve zero-current switching, effectively reducing the switching losses of the converter. In addition, the control strategy reduces the reactive circulating current of the converter, and the peak efficiency of the experimental prototype can reach 95.2%.

The feasibility of the fixed-frequency PWM control strategy was verified through experiments, which has significant implications for improving the efficiency of the converter and simplifying the design of resonant parameters and magnetic components in wide output voltage fields such as on-board chargers.

The purpose of this paper is to present a new method of measuring thermal resistance of power light-emitting diodes (LEDs). Properties of power LEDs strongly depend on their internal temperature. The value of this temperature depends on the cooling conditions characterized by thermal resistance.

The new method of measuring the value of this parameter belongs to the group of electric methods. In this method, the problem of estimating the value of electrical power converted into light is solved. By comparing the values of the case temperature obtained for the LED operating in the forward mode and the reverse-breakdown mode, the thermal power is estimated. On the basis of the measured value of the thermally sensitive parameter (the LED forward voltage) and the estimated value of the thermal power, thermal resistance is calculated.

The elaborated method was used to measure thermal resistance of the selected types of power LEDs operating at different cooling conditions. The correctness of the elaborated measurement method was proved by comparing the results of measurements obtained with the use of the new method and the infrared method.

On the basis of the obtained results of measurements and the catalog data of the tested diodes, the dependence of the measurement error of thermal resistance of the LED on its luminous efficiency is discussed.

The new measurement method is easy to use and more accurate than the classical method of thermal resistance measurement of the diode.