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The purpose of this paper is to design multiplexers (MUXs) based on ternary half subtractor and full subtractor using carbon nanotube field-effect transistors.

Conventionally, the binary logic functions are developed by using the binary decision diagram (BDD) systems. Each node in BDD is replaced by 2:1 MUX to implement the digital circuits. Similarly, in the ternary decision diagram, each node has to be replaced by 3:1 MUX. In this paper, ternary transformed BDD is used to design the ternary subtractors using 2:1 MUXs.

The performance of the proposed ternary half subtractor and full subtractor using the 2:1 MUX are compared with the 3:1 MUX-based ternary circuits. It has been observed that the delay, power and power delay product values are reduced, respectively, by 67.6%, 84.3%, 94.9% for half subtractor and 67.7%, 70.1%, 90.3% for full subtractor. From the Monte Carlo simulations, it is observed that the propagation delay and power dissipation of the proposed subtractors are increased by increasing the channel length due to process variations. The stability test is also performed and observed that the stability increases as the channel length and diameter are increased.

The proposed half subtractor and full subtractor show better performance over the existing subtractors.

This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-V_t technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with both CNT and metal oxide semiconductor technology for comparison by using various combination of (CMOSFET repeater-Cu interconnect) and (CNTFET repeater-CNT interconnect). Compared to conventional buffer, ProposedBuffer1 saves dynamic power by 84.86%, leakage power by 88% and offers reduction in delay by 72%. ProposedBuffer2 brings about dynamic power saving of 99.94%, leakage power saving of 93%, but causes delay penalty. Simulation using Stanford SPICE model for CNT and silicon-field effective transistor berkeley short-channel IGFET Model4 (BSIM4) predictive technology model (PTM) for MOS is done in H simulation program with integrated circuit emphasis for 32 nm.

Usually, the dynamic power consumption dominates the total power, while the leakage power has a negligible effect. But with the scaling of device technology, leakage power has become one of the important factors of consideration in low power design techniques. Various strategies are explored to suppress the leakage power in standby mode. The adoption of a multi-threshold design strategy is an effective approach to improve the performance of buffer circuits without compromising on the delay and area overhead. Unlike MOS technology, to implement multi-V_t transistors in case of CNT technology is quite easy. It can be achieved by varying diameter of carbon nanotubes using chirality control.

An unprecedented approach is taken for optimizing the delay and power dissipation and hence drastically reducing energy consumption by keeping proper harmony between wire technology and repeater-buffer technology. This paper proposes two novel ultra-low power buffers (PB1 and PB2) as repeaters for high-speed interconnect applications in portable devices. PB1 buffer implemented with high-speed CML technique nested with multi-threshold (V_t) technology sleep transistor so as to improve the speed along with a reduction in standby power consumption. PB2 is judicially implemented by inserting separable sized, dual chirality P type carbon nanotube field effective transistors. The HSpice simulation results justify the correctness of schemes.

Result analysis points out that compared to conventional Cu interconnect, the CNT interconnects paired with Proposed CNTFET buffer designs are more energy efficient. PB1 saves dynamic power by 84.86%, reduces propagation delay by 72% and leakage power consumption by 88%. PB2 brings about dynamic power saving of 99.4%, leakage power saving of 93%, with improvement in speed by 52%. This is mainly because of the fact that CNT interconnect offers low resistance and CNTFET drivers have high mobility and ballistic mode of operation.

Miniaturized smart sensors that can perform sensitive and selective real-time monitoring of target analytes are tremendously valuable for various sensing applications. So, the purpose of this paper is to provide details of sensors based on selective nanocoatings by combining trinitrotoluene (TNT) receptors bound to conjugated polydiacetylene (PDA) polymers with single-walled carbon nanotube field-effect transistors (CNTFETs) for detecting explosives TNT.

Following an introduction, this paper describes the way of creating an FET with CNTs, which are functionalized by the peptide based on TNT molecule recognition elements and PDA, to offer a system which has the capability of answering the presence of related target molecules (TNT). Finally, brief conclusions are drawn.

Single-wall nanotubes and reduced graphene oxide are interesting materials for creating biosensors of FETs at nanoscale because of unique electrical, mechanical, geometrical and biocompatible properties. Therefore, this sensor is designed and manufactured, and the results of applying TNT to sensor show good sensitivity and selectivity response.

In this timeframe of history, sensors based on CNTFET are required for different uses, including clinical diagnosis technologies, environmental tests and bioterrorism recognition technologies, that correspond to the military conflicts and terrorism. So, CNTFET sensor design provides real-time detection of TNT explosives.

Several ultra-low power and gigahertz current-starved voltage-controlled oscillator (CSVCO) circuits have been proposed and compared here. The presented structures are based on the three-stage hybrid circuit of the carbon nanotube field-effect transistors (CNTFETs) and low-power MOSFETs. The topologies exploit modified and compensated Schmitt trigger comparator parts to demonstrate better consumption power and frequency characteristics. The basic idea in the presented topologies is to compensate the Schmitt trigger comparator part of the basic CSVCO for achieving faster carrier mobility of the holes, reducing transistor leakage current and eliminating dummy transistors.

This study aims to propose and compare three different comparator-based VCOs that have been implemented using the CNTFETs. The considered circuits are shown to be capable of delivering the maximum 35 tuning frequency in the order of 1 GHz to 5 GHz. A major power thirsty part of the high-frequency ring VCOs is the Schmitt trigger stage. Here, several fast and low-power Schmitt trigger topologies are exploited to mitigate the dissipation power and enhance the oscillation frequency.

As a result of proposed modifications, more than one order of magnitude mitigation in the VCO power consumption with respect to the previously presented three-stage CSVCO is reported here. Thus, a VCO dissipation power of 3.5 µW at the frequency of 1.1 GHz and the tuning range of 26 per cent is observed for the well-established 32 nm technology and the supply voltage of 1 V. Such a low dissipation power is obtained around the operating frequency of the battery-powered cellular phones. In addition, using the p-carrier mobility compensation and enhancing the rise time of the Schmitt trigger part of the CSVCO, a maximum of 2.38 times higher oscillation frequency and 72 per cent wider tuning range with respect to Rahane and Kureshi (2017) are observed. Simultaneously, this topology exhibits an average of 20 per cent reduction in the power consumption.

Several new VCO topologies are presented here, and it is shown that they can significantly enhance the power dissipation of the GHz CSVCOs.

The purpose of this paper is to design novel hardened flip-flop using carbon nanotube field effect transistors (CNTFETs).

To design the proposed flip-flop, the Schmitt trigger-based soft error masking and unhardened latches have been used. In the proposed design, the novel mechanism, i.e. hysteresis property is used to enhance the hardness of the single event upset.

To obtain the simulation results, all the proposed circuits are extensively simulated in Hewlett simulation program with integrated circuit emphasis software. Moreover, the results of the proposed latches are compared to the conventional latches to show performance improvements. It is noted that the proposed latch shows the performance improvements up to 25.8%, 51.2% and 17.8%, respectively, in terms of power consumption, area and power delay product compared to the conventional latches. Additionally, it is observed that the simulation result of the proposed flip-flop confirmed the correctness with its respective functions.

The novel hardened flip-flop utilizing ST based SEM latch is presented. This flip-flop is significantly improves the performance and reliability compared to the existing flip-flops.

The performance of the conventional 6T SRAM cell can be improved by using GNRFET devices with multi-threshold technology. The proposed cell shows the strong capability to operate at the minimum supply voltage of 325 mV, whereas the conventional Si-CMOS 6 T SRAM unable to operate below 725 mV, which result in an acceptable failure rate.The advance of Si-CMOS (complementary metal-oxide-semiconductor) based 6 T SRAM cell faces inherent limitation with aggressive downscaling. Hence, there is a need to propose alternatives for the conventional cells.

This study aims to improve the performance of the conventional 6T SRAM cell using dual threshold technology, device sizing, optimization of supply voltage under process variation with GNRFET technology. Further performance can be enhanced by resolving half-select issue.

The GNRFET-based 6T SRAM cell demonstrates that it is capable of continued improve the performance under the process, voltage, and temperature (PVT) variations significantly better than its CMOS counterpart.

Nano-material fabrication technology of GNRFETs is in the early stage; hence, the different transistor models can be used to evaluate the parameters of future GNRFETs circuit.

GNRFET devices are suitable for implementing low power and high density SRAM cell.

The conventional Si-CMOS 6 T SRAM cell is a core component and used as the mass storage element in cache memory in computer system organization, mobile phone and other data storage devices.

This paper presents a new approach to implement an alternative design of GNRFET -based 6T SRAM cell with doped reservoirs that also supports process variation. In addition, multi-threshold technology optimizes the performance of the proposed cell. The proposed design provides a means to analyze delay and power of GNRFET-based SRAM under process variation with considering edge roughness, and offers design and fabrication insights for cell in the future.

The purpose of this paper is to introduce new implementations for parallel processing applications using bijective systolic networks and the corresponding carbon-based field emission controlled switching. The developed implementations are performed in the reversible domain to perform the required bijective parallel computing, where the implementations for parallel computations that utilize the presented field-emission controlled switching and their corresponding m-ary (many-valued) extensions for the use in nano systolic networks are introduced. The first part of the paper presents important fundamentals with regards to systolic computing and carbon-based field emission that will be utilized in the implementations within the second part of the paper.

The introduced systolic systems utilize recent findings in field emission and nano applications to implement the functionality of the basic bijective systolic network. This includes many-valued systolic computing via field emission techniques using carbon-based nanotubes and nanotips. The realization of bijective logic circuits in current and emerging technologies can be very important for various reasons. The reduction of power consumption is a major requirement for the circuit design in future technologies, and thus, the new nano systolic circuits can play an important role in the design of circuits that consume minimal power for future applications such as in low-power signal processing. In addition, the implemented bijective systems can be utilized to implement massive parallel processing and thus obtaining very high processing performance, where the implementation will also utilize the significant size reduction within the nano domain. The extensions of implementations to field emission-based many-valued systolic networks using the introduced bijective nano systolic architectures are also presented.

Novel bijective systolic architectures using nano-based field emission implementations are introduced in this paper, and the implementation using the general scheme of many-valued computing is presented. The carbon-based field emission implementation of nano systolic networks is also introduced. This is accomplished using the introduced field emission carbon-based devices, where field emission from carbon nanotubes and nano-apex carbon fibers is utilized. The implementations of the many-valued bijective systolic networks utilizing the introduced nano-based architectures are also presented.

The introduced bijective systolic implementations form new important directions in the systolic realizations using the newly emerging nano-based technologies. The 2-to-1 multiplexer is a basic building block in “switch logic,” where in switch logic, a logic circuit is realized as a combination of switches rather than a combination of logic gates as in the gate logic, which proves to be less costly in synthesizing multiplexer-based wide variety of modern circuits and systems since nano implementations exist in very compact space where carbon-based devices switch reliably using much less power than silicon-based devices. The introduced implementations for nano systolic computation are new and interesting for the design in future nanotechnologies that require optimal design specifications of minimum power consumption and minimum size layout such as in low-power control of autonomous robots and in the adiabatic low-power very-large-scale-integration circuit design for signal processing applications.

The purpose of this paper is to introduce new non‐classical implementations of neural networks (NNs). The developed implementations are performed in the quantum, nano, and optical domains to perform the required neural computing. The various implementations of the new NNs utilizing the introduced architectures are presented, and their extensions for the utilization in the non‐classical neural‐systolic networks are also introduced.

The introduced neural circuits utilize recent findings in the quantum, nano, and optical fields to implement the functionality of the basic NN. This includes the techniques of many‐valued quantum computing (MVQC), carbon nanotubes (CNT), and linear optics. The extensions of implementations to non‐classical neural‐systolic networks using the introduced neural‐systolic architectures are also presented.

Novel NN implementations are introduced in this paper. NN implementation using the general scheme of MVQC is presented. The proposed method uses the many‐valued quantum orthonormal computational basis states to implement such computations. Physical implementation of quantum computing (QC) is performed by controlling the potential to yield specific wavefunction as a result of solving the Schrödinger equation that governs the dynamics in the quantum domain. The CNT‐based implementation of logic NNs is also introduced. New implementations of logic NNs are also introduced that utilize new linear optical circuits which use coherent light beams to perform the functionality of the basic logic multiplexer by utilizing the properties of frequency, polarization, and incident angle. The implementations of non‐classical neural‐systolic networks using the introduced quantum, nano, and optical neural architectures are also presented.

The introduced NN implementations form new important directions in the NN realizations using the newly emerging technologies. Since the new quantum and optical implementations have the advantages of very high‐speed and low‐power consumption, and the nano implementation exists in very compact space where CNT‐based field effect transistor switches reliably using much less power than a silicon‐based device, the introduced implementations for non‐classical neural computation are new and interesting for the design in future technologies that require the optimal design specifications of super‐high speed, minimum power consumption, and minimum size, such as in low‐power control of autonomous robots, adiabatic low‐power very‐large‐scale integration circuit design for signal processing applications, QC, and nanotechnology.

This paper aims to present the edge scattering dominant circuit modeling. The effect of crosstalk on gate oxide reliability (GOR), along with the mitigation using shielding technique is further studied.

An equivalent distributed Resistance Inductance Capacitance circuit of capacitively coupled interconnects of multilayer graphene nanoribbon (MLGNR) has been considered for T Simulation Program with Integrated Circuit Emphasis (TSPICE) simulations under functional and dynamic switching conditions. Complementary metal oxide semiconductor driver transistors are modeled by high performance predictive technology model that drive the distributed segment with a capacitive load of 0.001 fF, V_DD and clock frequency as 0.7 V and 0.2 GHz, respectively, at 14 nm technology node.

The results reveal that the crosstalk induced delay and noise area are dominated by the overall mean free path (MFP) (i.e. including the effect of edge roughness induced scattering), in contrary to, acoustic and optical scattering limited MFP with the temperature, width and length variations. Further, GOR, estimated in terms of average failure rate (AFR), shows that the shielding technique is an effective method to minimize the relative GOR failure rate by, 0.93e-7 and 0.7e-7, in comparison to the non-shielded case with variations in interconnect’s length and width, respectively.

Considering realistic circuit modeling for MLGNR interconnects by incorporating the edge roughness induced scattering mechanism, the outcomes exhibit more penalty in terms of crosstalk induced noise area and delay. The shielding technique is found to be an effective mitigating technique for minimizing AFR in coupled MLGNR interconnects.

This paper aims to present an inexact 4:2 compressor cell using carbon nanotube filed effect transistors (CNFETs).

To design this cell, the capacitive threshold logic (CTL) has been used.

To evaluate the proposed cell, comprehensive simulations are carried out at two levels of the circuit and image processing. At the circuit level, the HSPICE software has been used and the power consumption, delay, and power-delay product are calculated. Also, the power-delaytransistor count product (PDAP) is used to make a compromise between all metrics. On the other hand, the Monte Carlo analysis has been used to scrutinize the robustness of the proposed cell against the variations in the manufacturing process. The results of simulations at this level of abstraction indicate the superiority of the proposed cell to other circuits. At the application level, the MATLAB software is also used to evaluate the peak signal-to-noise ratio (PSNR) figure of merit. At this level, the two primary images are multiplied by a multiplier circuit consisting of 4:2 compressors. The results of this simulation also show the superiority of the proposed cell to others.

This cell significantly reduces the number of transistors and only consists of NOT gates.