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Full adder cells are building blocks of arithmetic circuits and affect the performance of the entire digital system. The purpose of this study is to provide a low-power and high-performance full adder cell.

Approximate computing is a novel paradigm that is used to design low-power and high-performance circuits. In this paper, a novel 1-bit approximate full adder cell is presented using the combination of complementary metal-oxide-semiconductor, transmission gate and pass transistor logic styles.

Simulation results confirm the superiority of the proposed design in terms of power consumption and power–delay product (PDP) criteria compared to state-of-the-art circuits. Also, the proposed full adder cell is applied in an 8-bit ripple carry adder to accomplish image processing applications including image blending, motion detection and edge detection. The results confirm that the proposed cell has premier compromise and outperforms its counterparts.

The proposed cell consists of only 11 transistors and decreases the switching activity remarkably. Therefore, it is a low-power and low-PDP cell.

This paper aims to present an inexact 4:2 compressor cell using carbon nanotube filed effect transistors (CNFETs).

To design this cell, the capacitive threshold logic (CTL) has been used.

To evaluate the proposed cell, comprehensive simulations are carried out at two levels of the circuit and image processing. At the circuit level, the HSPICE software has been used and the power consumption, delay, and power-delay product are calculated. Also, the power-delaytransistor count product (PDAP) is used to make a compromise between all metrics. On the other hand, the Monte Carlo analysis has been used to scrutinize the robustness of the proposed cell against the variations in the manufacturing process. The results of simulations at this level of abstraction indicate the superiority of the proposed cell to other circuits. At the application level, the MATLAB software is also used to evaluate the peak signal-to-noise ratio (PSNR) figure of merit. At this level, the two primary images are multiplied by a multiplier circuit consisting of 4:2 compressors. The results of this simulation also show the superiority of the proposed cell to others.

This cell significantly reduces the number of transistors and only consists of NOT gates.

The high demand for fast, energy-efficient, compact computational blocks in digital electronics has led the researchers to use approximate computing in applications where inaccuracy of outputs is tolerable. The purpose of this paper is to present two ultra-high-speed current-mode approximate full adders (FA) by using carbon nanotube field-effect transistors.

Instead of using threshold detectors, which are common elements in current-mode logic, diodes are used to stabilize voltage. Zener diodes and ultra-low-power diodes are used within the first and second proposed designs, respectively. This innovation eliminates threshold detectors from critical path and makes it shorter. Then, the new adders are employed in the image processing application of Laplace filter, which detects edges in an image.

Simulation results demonstrate very high-speed operation for the first and second proposed designs, which are, respectively, 44.7 per cent and 21.6 per cent faster than the next high-speed adder cell. In addition, they make a reasonable compromise between power-delay product (PDP) and other important evaluating factors in the context of approximate computing. They have very few transistors and very low total error distance. In addition, they do not propagate error to higher bit positions by generating output carry correctly. According to the investigations, up to four inexact FA can be used in the Laplace filter computations without a significant image quality loss. The employment of the first and second proposed designs results in 42.4 per cent and 32.2 per cent PDP reduction compared to when no approximate FA are used in an 8-bit ripple adder.

Two new current-mode inexact FA are presented. They use diodes as voltage regulators to design current-mode approximate full-adders with very short critical path for the first time.

The performance of the conventional 6T SRAM cell can be improved by using GNRFET devices with multi-threshold technology. The proposed cell shows the strong capability to operate at the minimum supply voltage of 325 mV, whereas the conventional Si-CMOS 6 T SRAM unable to operate below 725 mV, which result in an acceptable failure rate.The advance of Si-CMOS (complementary metal-oxide-semiconductor) based 6 T SRAM cell faces inherent limitation with aggressive downscaling. Hence, there is a need to propose alternatives for the conventional cells.

This study aims to improve the performance of the conventional 6T SRAM cell using dual threshold technology, device sizing, optimization of supply voltage under process variation with GNRFET technology. Further performance can be enhanced by resolving half-select issue.

The GNRFET-based 6T SRAM cell demonstrates that it is capable of continued improve the performance under the process, voltage, and temperature (PVT) variations significantly better than its CMOS counterpart.

Nano-material fabrication technology of GNRFETs is in the early stage; hence, the different transistor models can be used to evaluate the parameters of future GNRFETs circuit.

GNRFET devices are suitable for implementing low power and high density SRAM cell.

The conventional Si-CMOS 6 T SRAM cell is a core component and used as the mass storage element in cache memory in computer system organization, mobile phone and other data storage devices.

This paper presents a new approach to implement an alternative design of GNRFET -based 6T SRAM cell with doped reservoirs that also supports process variation. In addition, multi-threshold technology optimizes the performance of the proposed cell. The proposed design provides a means to analyze delay and power of GNRFET-based SRAM under process variation with considering edge roughness, and offers design and fabrication insights for cell in the future.

The purpose of this paper is to provide a review of recent developments in nanoelectronic devices, with an emphasis on the materials and fabrication technologies employed.

This paper focuses on three critical fields of nanoelectronics: integrated circuits (ICs), sensors and displays. It describes recent developments and considers the materials and techniques used in their fabrication.

This paper shows that nanoelectronic developments, particularly experimental ICs, are progressing very rapidly but all manner of different materials and non‐standard fabrication processes are involved. Major efforts are underway to develop simple and cost‐effective techniques which will allow the high volume production of suitable nanomaterials and their incorporation into commercial nanoelectronic devices.

The paper provides an up‐to‐date review of nanoelectronic device developments and fabrication technologies.

This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-V_t technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with both CNT and metal oxide semiconductor technology for comparison by using various combination of (CMOSFET repeater-Cu interconnect) and (CNTFET repeater-CNT interconnect). Compared to conventional buffer, ProposedBuffer1 saves dynamic power by 84.86%, leakage power by 88% and offers reduction in delay by 72%. ProposedBuffer2 brings about dynamic power saving of 99.94%, leakage power saving of 93%, but causes delay penalty. Simulation using Stanford SPICE model for CNT and silicon-field effective transistor berkeley short-channel IGFET Model4 (BSIM4) predictive technology model (PTM) for MOS is done in H simulation program with integrated circuit emphasis for 32 nm.

Usually, the dynamic power consumption dominates the total power, while the leakage power has a negligible effect. But with the scaling of device technology, leakage power has become one of the important factors of consideration in low power design techniques. Various strategies are explored to suppress the leakage power in standby mode. The adoption of a multi-threshold design strategy is an effective approach to improve the performance of buffer circuits without compromising on the delay and area overhead. Unlike MOS technology, to implement multi-V_t transistors in case of CNT technology is quite easy. It can be achieved by varying diameter of carbon nanotubes using chirality control.

An unprecedented approach is taken for optimizing the delay and power dissipation and hence drastically reducing energy consumption by keeping proper harmony between wire technology and repeater-buffer technology. This paper proposes two novel ultra-low power buffers (PB1 and PB2) as repeaters for high-speed interconnect applications in portable devices. PB1 buffer implemented with high-speed CML technique nested with multi-threshold (V_t) technology sleep transistor so as to improve the speed along with a reduction in standby power consumption. PB2 is judicially implemented by inserting separable sized, dual chirality P type carbon nanotube field effective transistors. The HSpice simulation results justify the correctness of schemes.

Result analysis points out that compared to conventional Cu interconnect, the CNT interconnects paired with Proposed CNTFET buffer designs are more energy efficient. PB1 saves dynamic power by 84.86%, reduces propagation delay by 72% and leakage power consumption by 88%. PB2 brings about dynamic power saving of 99.4%, leakage power saving of 93%, with improvement in speed by 52%. This is mainly because of the fact that CNT interconnect offers low resistance and CNTFET drivers have high mobility and ballistic mode of operation.

This review paper aims to focus on recent advances of carbon nanotubes (CNTs) to produce gas sensors. Gas sensors are widely used for monitoring hazardous gas leakages and emissions in the industry, households and other areas. For better safety and a healthy environment, it is highly desirable to have gas sensors with higher accuracy and enhanced sensing features.

In this review, the authors focus on recent contributions of CNTs to the technology for developing different types of gas sensors. The design, fabrication process and sensing mechanism of each gas sensor are summarized, together with their advantages and disadvantages.

Nowadays, CNTs are well-known materials which have attracted a significant amount of attention owing to their excellent electrical, electronic and mechanical properties. On exposure to various gases, their properties allow the detection of gases using different methods. Therefore, over recent years, researchers have developed several different types of gas sensors along with other types of sensors for temperature, strain, pressure, etc.

The main purpose of this review is to introduce CNTs as candidates for future research in the field of gas sensing applications and to focus on current technical challenges associated with CNT-based gas sensors.

The purpose of this paper is to design multiplexers (MUXs) based on ternary half subtractor and full subtractor using carbon nanotube field-effect transistors.

Conventionally, the binary logic functions are developed by using the binary decision diagram (BDD) systems. Each node in BDD is replaced by 2:1 MUX to implement the digital circuits. Similarly, in the ternary decision diagram, each node has to be replaced by 3:1 MUX. In this paper, ternary transformed BDD is used to design the ternary subtractors using 2:1 MUXs.

The performance of the proposed ternary half subtractor and full subtractor using the 2:1 MUX are compared with the 3:1 MUX-based ternary circuits. It has been observed that the delay, power and power delay product values are reduced, respectively, by 67.6%, 84.3%, 94.9% for half subtractor and 67.7%, 70.1%, 90.3% for full subtractor. From the Monte Carlo simulations, it is observed that the propagation delay and power dissipation of the proposed subtractors are increased by increasing the channel length due to process variations. The stability test is also performed and observed that the stability increases as the channel length and diameter are increased.

The proposed half subtractor and full subtractor show better performance over the existing subtractors.

Quantum-dot cellular automata (QCA) has attracted computer scientists as new emerging nanotechnology for replacement the current CMOS technology because it has unique characteristics such as high frequency, extremely small feature size and low power consumption. The main building blocks in QCA are the majority gate and inverter so any Boolean function can be represented using these gates. Many important circuits were the target for implemented in this technology in an optimal form, such as random-access memory (RAM) cell. QCA-RAM cells were introduced in literature with different forms but most of them are not optimized enough. This paper aims to demonstrate QCA inherent capabilities that can facilitate the design of many important gates such as the XOR gate and multiplexer (MUX) without following any Boolean function to get an optimum design in terms of complexity and delay.

In this paper, a novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell. The proposed RAM cells are the lowest cost required compared with different counterparts. The presented RAM cells used a new approach that follows the new suggested block diagram. The presented circuits are simulated and tested with QCADesigner and QCAPro tools.

The comparison of the proposed circuits with the previously reported in the literature show noticeable improvements in speed, area, and the number of cells. The cost function analysis results for the proposed RAM cells show significant improvement compared to older circuits.

A novel structure of QCA-MUX in an optimal form will be used to design two unique structures of a RAM cell.

Several ultra-low power and gigahertz current-starved voltage-controlled oscillator (CSVCO) circuits have been proposed and compared here. The presented structures are based on the three-stage hybrid circuit of the carbon nanotube field-effect transistors (CNTFETs) and low-power MOSFETs. The topologies exploit modified and compensated Schmitt trigger comparator parts to demonstrate better consumption power and frequency characteristics. The basic idea in the presented topologies is to compensate the Schmitt trigger comparator part of the basic CSVCO for achieving faster carrier mobility of the holes, reducing transistor leakage current and eliminating dummy transistors.

This study aims to propose and compare three different comparator-based VCOs that have been implemented using the CNTFETs. The considered circuits are shown to be capable of delivering the maximum 35 tuning frequency in the order of 1 GHz to 5 GHz. A major power thirsty part of the high-frequency ring VCOs is the Schmitt trigger stage. Here, several fast and low-power Schmitt trigger topologies are exploited to mitigate the dissipation power and enhance the oscillation frequency.

As a result of proposed modifications, more than one order of magnitude mitigation in the VCO power consumption with respect to the previously presented three-stage CSVCO is reported here. Thus, a VCO dissipation power of 3.5 µW at the frequency of 1.1 GHz and the tuning range of 26 per cent is observed for the well-established 32 nm technology and the supply voltage of 1 V. Such a low dissipation power is obtained around the operating frequency of the battery-powered cellular phones. In addition, using the p-carrier mobility compensation and enhancing the rise time of the Schmitt trigger part of the CSVCO, a maximum of 2.38 times higher oscillation frequency and 72 per cent wider tuning range with respect to Rahane and Kureshi (2017) are observed. Simultaneously, this topology exhibits an average of 20 per cent reduction in the power consumption.

Several new VCO topologies are presented here, and it is shown that they can significantly enhance the power dissipation of the GHz CSVCOs.