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This paper aims to generate a review of available techniques to measure Residual Stress (RS) in Ti6Al4V components made by Ti6Al4V.

State of the art; literature review in the field of Residual Stress measurement of Ti6Al4V parts made by selective laser melting (SLM).

Different Residual Stress measurement techniques were detailed, regarding its concept, advantages and limitations. Regarding all researched references, hole drilling (semi destructive) and X-ray diffraction (nondestructive) were the most cited techniques for Residual Stress measurement of Ti6Al4V parts made by SLM.

An extensive analysis of RS measurement techniques for Ti6Al4V parts made by SLM.

This paper aims to review the effect of traditional shot peening (SP), laser shock peening (LSP) and water jet cavitation peening (WJP) on microstructure evolution and corrosion behavior of austenitic stainless steels 316L and 304.

The effect of SP, LSP and WJP on corrosion behavior of 316L and 304 were discussed in terms of surface peening–induced change in surface roughness, stress state and grain size.

Residual compressive stress and grain refinement were introduced after SP, LSP and WJP treatment in 316L and 304 stainless steels. Superior corrosion resistance can be obtained by WJP compared with SP and LSP.

The relationship between SP-, LSP- and WJP-induced change in microstructure and stress state and corrosion resistance was summarized.

This paper aims to find a closed-form expression for the frequency and amplitude of single-ended ring oscillators when transistors experience all regions.

In this paper, the analytical relationships presented for ring oscillator amplitude and frequency are approximately derived due to the nonlinear nature of this oscillator, taking into account the differential equation that governs the ring oscillator and its output waveform.

In the case where the transistors experience the cut-off region, the relationships presented so far have no connection between the frequency and the dimensions of the transistor, which is not valid in practice. The relationship is presented for the frequency, including the dimensions of the transistor. Also, a simple and approximately accurate relationship for the oscillator amplitude is provided in this case.

The validity of these relationships has been investigated by analyzing and simulating a single-ended oscillator in 0.18 µm technology.