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Article
Publication date: 15 July 2022

Halo Dalshad Omar, Auwal Abdulkadir, Md. Roslan Hashim and Mohd Zamir Pakhuruddin

This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi).

Abstract

Purpose

This paper aims to present investigation on textured polyimide (PI) substrate for enhanced light absorption in flexible black silicon (bSi).

Design/methodology/approach

Flexible bSi with thickness of 60 µm is used in this work. To texture the PI substrate, copper-seeding technique is used. A copper (Cu) layer with a thickness of 100 nm is deposited on PI substrate by sputtering. The substrate is then annealed at 400°C in air ambient for different durations of 60, 90 and 120 min.

Findings

With 90 min of annealing, root mean square roughness as large as 130 nm, peak angle of 24° and angle distribution of up to 87° are obtained. With this texturing condition, the flexible bSi exhibits maximum potential short-circuit current density (Jmax) of 40.33 mA/cm2, or 0.45 mA/cm2 higher compared to the flexible bSi on planar PI. The improvement is attributed to enhanced light scattering at the flexible bSi/textured PI interface. The findings from this work demonstrate that the optimization of the PI texturing via Cu-seeding process leads to an enhancement in the long wavelengths light absorption and potential Jmax in the flexible bSi absorber.

Originality/value

Demonstrated enhanced light absorption and potential Jmax in flexible bSi on textured PI substrate (compared to planar PI substrate) by Cu-seeding with different annealing durations.

Details

Microelectronics International, vol. 40 no. 1
Type: Research Article
ISSN: 1356-5362

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