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This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation was associated to the interface between the AlN and the sapphire. The results from this study would provide a guideline in selecting suitable orientation of sapphire for obtaining desirable AlN crystals, in particular, for reducing threading dislocation density in the AlN/sapphire templates for developing UV LEDs.

The approach of atomic structure by visualization for electronic and structural analysis numerical method to develop shape of atomic geometry to evaluate which plane are more suitable for the AlGaN technology UV-LED based.

The calculation based on ratio on first and second layers can be done by introduction of lattice constant.

With plane’s color of cutting plane on bulky materials, all the shape looks the same.

By implementing this method, the authors can save time to find the most suitable plane on the growth structure.

All authors of this research paper have directly participated in the planning, execution or analysis of the study; all authors of this paper have read and approved the final version submitted; the contents of this manuscript have not been copyrighted or published previously; the contents of this manuscript are not now under consideration for publication elsewhere; the contents of this manuscript will not be copyrighted, submitted or published elsewhere, whereas acceptance by the journal is under consideration.

The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.

In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.

By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 10⁸ cm⁻². The surface of the AlN layer with that nucleation layer was smoother than its counterparts.

This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.

This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films.

The AlN films were prepared using RF magnetron sputtering plasma on a silicon substrate without any external heating with various deposition times. The films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), atomic force microscope (AFM) and nanoindentation techniques.

The XRD results show that the AlN thin films are highly oriented along the (100) AlN plane at various deposition times indicating the a-axis preferred orientation. All the AlN thin films exhibit hexagonal AlN with a wurtzite structure. The hardness and Young’s modulus of AlN thin films with various deposition times were measured using a nanoindenter. The measured hardness of the AlN films on Si was in the range of 14.1 to 14.7 GPa. The surface roughness and the grain size measured using the AFM revealed that both are dependent on the deposition times.

The novelty of this work lies with a comparison of hardness and Young’s modulus result obtained at different sputtering deposition temperature. This study also provides the relation of AlN thin films’ crystallinity with the hardness of the deposited films.

Drugs are strategic products with essential functions in human health. An optimum design of the pharmaceutical supply chain is critical to avoid economic damage and adverse effects on human health. The vehicle-routing problem, focused on finding the lowest-cost routes with available vehicles and constraints, such as time constraints and road length, is an important aspect of this. In this paper, the vehicle routing problem (VRP) for a pharmaceutical company in Turkey is discussed.

A mixed-integer programming (MIP) model based on the vehicle routing problem with time windows (VRPTW) is presented, aiming to minimize the total route cost with certain constraints. As the model provides an optimum solution for small problem sizes with the GUROBI® solver, for large problem sizes, metaheuristic methods that simulate annealing and adaptive large neighborhood search algorithms are proposed. A real dataset was used to analyze the effectiveness of the metaheuristic algorithms. The proposed simulated annealing (SA) and adaptive large neighborhood search (ALNS) were evaluated and compared against GUROBI® and each other through a set of real problem instances.

The model is solved optimally for a small-sized dataset with exact algorithms; for solving a larger dataset, however, metaheuristic algorithms require significantly lesser time. For the problem addressed in this study, while the metaheuristic algorithms obtained the optimum solution in less than one minute, the solution in the GUROBI® solver was limited to one hour and three hours, and no solution could be obtained in this time interval.

The VRPTW problem presented in this paper is a real-life problem. The vehicle fleet owned by the factory cannot be transported between certain suppliers, which complicates the solution of the problem.

This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection.

GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured.

The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability.

This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool.

Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out.

Critical figure-of-merits, specifically the DC characteristics, 2DEG concentrations and mobility of the heterostructure device, have been evaluated. Significant observations include enhancement of maximum current density by 63 per cent, whereas the electron concentration was found to propagate by 1,020 cm⁻³ in the channel.

This work aims to provide tactical optimization to traditional heterostructure field effect transistors, rendering its application as power amplifiers, Monolithic Microwave Integrated Circuit (MMICs) and Radar, which requires low noise performance and very high radio frequency design operations.

Analysis in covering the breadth and complexity of heterostructure devices has been carefully executed through extensive TCAD modeling, and the end structure obtained has been optimized to provide best performance.

The purpose of this paper is to provide a model for semantically annotating business process models stored in a repository. The purpose of the model is to facilitate the searching of process models, to support navigating the process model repository and to enhance the understandability of process models.

The annotation model has been developed by following a design science research approach. By analysing existing works the authors have identified the requirements for such an annotation model. Following these requirements the authors have designed a context‐based process semantic annotation model. As a proof of concept, the annotation model has been implemented in a repository prototype and its applicability demonstrated. Finally, the annotation model has been evaluated in two controlled experimental studies.

The proposed annotation model can be used to positively affect searching, navigation and understandability of process models.

Application of the annotation model and clearly defined concepts in the process model repository is expected to improve the process of finding relevant process models in the repository for reuse.

The contribution of the paper is both theoretical and practical. It provides a clear‐cut context‐based process semantic annotation model that can be implemented easily in any process model repository.

The purpose of this paper is to enhance the efficiency of the LED by introducing three-step magnesium (Mg) doping profile. Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region). Attention was paid to the effects of the Mg doping concentration of the first p-GaN layer (i.e. layer close to the active region).

Indium gallium nitride (InGaN)–based light-emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal organic chemical vapor deposition. The Cp₂Mg flow rates for the second and third p-GaN layers were set at 50 sccm and 325 sccm, respectively. For the first p-GaN layer, the Cp₂Mg flow rate varied from 150 sccm to 300 sccm to achieve different Mg dopant concentrations.

The full width at half maximum (FWHM) for the GaN (102) plane increases with increasing Cp₂Mg flow rate. FWHM for the sample with 150, 250 and 300 sccm Cp₂Mg flow rates was 233 arcsec, 236 arcsec and 245 arcsec, respectively. This result indicates that the edge and mixed dislocations in the p-GaN layer were increased with increasing Cp₂Mg flow rate. Atomic force microscopy (AFM) results reveal that the sample grown with 300 sccm exhibits the highest surface roughness, followed by 150 sccm and 250 sccm. The surface roughness of these samples is 2.40 nm, 2.12 nm and 2.08 nm, respectively. Simultaneously, the photoluminescence (PL) spectrum of the 250 sccm sample shows the highest band edge intensity over the yellow band ratio compared to that of other samples. The light output power measurements found that the sample with 250 sccm exhibits high output power because of sufficient hole injection toward the active region.

Through this study, the three steps of the Mg profile on the p-GaN layer were proposed to show high-efficiency InGaN-based LED. The optimal Mg concentration was studied on the first p-GaN layer (i.e. layer close to active region) to improve the LED performance by varying the Cp₂Mg flow rate. This finding was in line with the result of PL and AFM results when the samples with 250 sccm have the highest Mg acceptor and good surface quality of the p-GaN layer. It can be deduced that the first p-GaN layer doping has a significant effect on the crystalline quality, surface roughness and light emission properties of the LED epi structure.

This study aims to investigate the effects of indium composition on surface morphology and optical properties of indium gallium nitride on gallium nitride (InGaN/GaN) heterostructures.

The InGaN/GaN heterostructures were grown on flat sapphire substrates using a metal-organic chemical vapour deposition reactor with a trimethylindium flow rate of 368  sccm. The indium composition of the InGaN epilayers was controlled by applying different substrate temperatures. The surface morphology and topography were observed using field emission scanning electron microscope (F.E.I. Nova NanoSEM 450) and atomic force microscopy (Bruker Dimension Edge) with a scanning area of 10 µm × 10 µm, respectively. The compositional analysis was done by Energy Dispersive X-Ray Analysis. Finally, the ultraviolet-visible (UV-Vis) spectrophotometer (Agilent Technology Cary Series UV-Vis-near-infrared spectrometer) was measured from 200 nm to 1500 nm to investigate the optical properties of the samples.

The InGaN/GaN thin films have been successfully grown at three different substrate temperatures. The indium composition reduced as the temperature increased. At 760 C, the highest indium composition was obtained, 21.17%. This result was acquired from the simulation fitting of ω−2θ scan on (0002) plane using LEPTOS software by Bruker D8 Discover. The InGaN/GaN shows significantly different surface morphologies and topographies as the indium composition increases. The thickness of InGaN epilayers of the structure was ∼300 nm estimated from the field emission scanning electron microscopy. The energy bandgap of the InGaN was 2.54 eV – 2.79 eV measured by UV-Vis measurements.

It can be seen from this work that changes in substrate temperature can affect the indium composition. From all the results obtained, this work can be helpful towards efficiency improvement in solar cell applications.

The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED).

InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition.

The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824.

This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.