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Aluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits.

Dense AlN ceramics with Y₂O₃ and LaF₃ as sintering additives are prepared. The effects of these additives on the density, phase composition, microstructure and thermal conductivity of AlN ceramics are investigated.

Results show that 2 Wt.% Y₂O₃-doped additive is insufficient for the samples to achieve the full densification sintered at 1,700°C. When LaF₃ is added with Y₂O₃, the samples are perfectly densified at the same sintering condition. The relative density and thermal conductivity of the samples are 97.8-99.07 per cent and 169.104-200.010 W·m-1·K-1, respectively. The density of the samples and their microstructure, especially the content and distribution of secondary phases, is necessary to control the thermal conductivity of AlN ceramics.

Y₂O₃ and LaF₃ additives can effectively promote densification and enhance the thermal conductivity of AlN ceramics in a low sintering temperature, and the AlN ceramics added with Y₂O₃-LaF₃ might have potential applications in package materials for high-power integrated circuits.

This paper aims to investigate the preparation of AlN and Al₂O₃, as well as the effect of nano-AlN and nano-Al₂O₃, on friction and wear properties of copper-steel clad plate immersed in the lubricants.

Nano-AlN or nano-Al₂O₃ (0.1, 0.2, 0.3, 0.4 and 0.5 Wt.%) functional fluids were prepared. Their tribological properties were tested by an MRS-10A four-ball friction tester and a ball-on-plate configuration, and scanning electron microscope observed the worn surface of the plate.

An increase in nano-AlN and Al₂O₃ content enhances the extreme pressure and anti-wear performance of the lubricant. The best performance is achieved at 0.5 Wt.% of nano-AlN and 0.3 Wt.% of nano-Al₂O₃ with PB of 834 N and 883 N, a coefficient of friction (COF) of approximately 0.07 and 0.06, respectively. Furthermore, the inclusion of nano-AlN and nano-Al₂O₃ particles in the lubricant enhances its extreme pressure performance and reduces wear, leading to decreased wear spot depth. The lubricating effect of the nano-Al₂O₃ lubricant on the surface of the copper-steel composite plate is slightly superior to that of the nano-AlN lubricant, with a COF reaching 0.07. Both lubricants effectively fill and lubricate the holes on the surface of the copper-steel composite plate.

AlN and Al₂O₃ as water-based lubricants have excellent lubrication performance and can reduce the COF. It can provide some reference for the practical application of nano-water-based lubricants.

The peer review history for this article is available at: https://publons.com/publon/10.1108/ILT-08-2023-0255/

This paper aims to report the influence of sputtering plasma deposition time on the structural and mechanical properties of the a-axis oriented aluminium nitride (AlN) thin films.

The AlN films were prepared using RF magnetron sputtering plasma on a silicon substrate without any external heating with various deposition times. The films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), atomic force microscope (AFM) and nanoindentation techniques.

The XRD results show that the AlN thin films are highly oriented along the (100) AlN plane at various deposition times indicating the a-axis preferred orientation. All the AlN thin films exhibit hexagonal AlN with a wurtzite structure. The hardness and Young’s modulus of AlN thin films with various deposition times were measured using a nanoindenter. The measured hardness of the AlN films on Si was in the range of 14.1 to 14.7 GPa. The surface roughness and the grain size measured using the AFM revealed that both are dependent on the deposition times.

The novelty of this work lies with a comparison of hardness and Young’s modulus result obtained at different sputtering deposition temperature. This study also provides the relation of AlN thin films’ crystallinity with the hardness of the deposited films.

The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate.

In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison.

By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 × 10⁸ cm⁻². The surface of the AlN layer with that nucleation layer was smoother than its counterparts.

This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.

This study aims to present a numerical study of atomic structure for aluminium nitride (AlN) when the crystal was assumed grown on different orientation of sapphire substrate. The change of the AlN atomic structure with sapphire orientation was associated to the interface between the AlN and the sapphire. The results from this study would provide a guideline in selecting suitable orientation of sapphire for obtaining desirable AlN crystals, in particular, for reducing threading dislocation density in the AlN/sapphire templates for developing UV LEDs.

The approach of atomic structure by visualization for electronic and structural analysis numerical method to develop shape of atomic geometry to evaluate which plane are more suitable for the AlGaN technology UV-LED based.

The calculation based on ratio on first and second layers can be done by introduction of lattice constant.

With plane’s color of cutting plane on bulky materials, all the shape looks the same.

By implementing this method, the authors can save time to find the most suitable plane on the growth structure.

All authors of this research paper have directly participated in the planning, execution or analysis of the study; all authors of this paper have read and approved the final version submitted; the contents of this manuscript have not been copyrighted or published previously; the contents of this manuscript are not now under consideration for publication elsewhere; the contents of this manuscript will not be copyrighted, submitted or published elsewhere, whereas acceptance by the journal is under consideration.

This study aims to investigate the effect of temperature applied at the initial deposition of Aluminium Nitride (AlN) thin-film on a silicon substrate by high-power impulse magnetron sputtering (HiPIMS) technique.

HiPIMS system was used to deposit AlN thin film at a low output power of 200 W. The ramping temperature was introduced to substrate from room temperature to maximum 100°Cat the initial deposition of thin-film, and the result was compared to thin-film sputtered with no additional heat. For the heat assistance AlN deposition, the substrate was let to cool down to room temperature for the remaining deposition time. The thin-films were characterized by X-ray diffraction (XRD) and atomic force microscope (AFM) while the MIS Schottky diode characteristic investigated through current-voltage response by a two-point probe method.

The XRD pattern shows significant improvement of the strong peak of the c-axis (002) preferred orientation of the AlN thin-film. The peak was observed narrowed with temperature assisted where FWHM calculated at 0.35° compared to FWHM of AlN thin film deposited at room temperature at around 0.59°. The degree of crystallinity of bulk thin film was improved by 28% with temperature assisted. The AFM images show significant improvement as low surface roughness achieved at around 0.7 nm for temperature assisted sample compares to 3 nm with no heat applied.

The small amount of heat introduced to the substrate has significantly improved the growth of the c-axis AlN thin film, and this method is favorable in the deposition of the high-quality thin film at the low-temperature process.

The purpose of this paper is to present the characteristics of novel silicon Schottky barrier (SB) photodiodes (PDs) with aluminium nitride (AlN) (100 nm) nucleation layer.

Comparison was made with conventional silicon SB PDs.

It was found that smaller dark current could be achieved with AlN nucleation layer. It was also found that effective SB height increased from 0.65 to 0.71 eV with the insertion of the AlN layer. The dark leakage current for the Schottky PDs with the AlN layer was shown to be about two orders of magnitude smaller than that for the conventional silicon SB PDs.

It is possible that the detrimental effect of interface states situated near the metal semiconductor interface was less pronounced for the sample owing to the insertion of the AlN nucleation layer.

There is believed to be no other report on silicon SB PDs capped with an AlN layer in the literature. This paper describes the fabricated silicon SB PDs and reports on the electrical characteristics of the devices with an AlN nucleation layer grown at low temperature.

The similarity of its temperature expansion coefficient to that of silicon, as well as its high thermal conductivity, makes AlN a material suited for application in microelectronics. A comparison of the various AlN manufacturers shows above all differences in the choice of sintering aids and the type of sintering process. A comparison of a standard paste system (Du Pont) with a new special development (Shoei) demonstrates the need for adapting the pastes to AlN ceramics. Thin film technology is possible at a standard similar to that of Al2O3.

The purpose of this paper is to present the influence of gate dielectric etching on obtained MISFET (metal insulator semiconductor field effect transistor) structures. Because of its properties, aluminum nitride (AlN) layers can be successfully used in a large area of applications. In addition, AIN has a wide bandgap (6.2eV) and high thermal conductivity (3.2 W/cm * K). Its melting temperature is greater than 2,000°C. The relative permittivity is about 9. All these features (especially high power, high temperature and high-frequency) make AlN a useful material in the fields of electronic, optical and acoustic applications.

To fabricate n-channel transistors, silicon technology was used. The 50-nm thick AlN films were deposited using the magnetron sputtering. After preparation of SiO₂/AlN stack as the gate dielectric, the optimization processes of dry etching in plasma environment by Taguchi method were realized. In the next step, three methods of AlN etching were selected and used to MISFET device fabrication. Atomic force microscopy and scanning electron microscopy allowed to surfacing of the state observation after etching process. The current–voltage (I–V) output and transfer characteristics of structures with modified etch technology were measured. Keithley SMU 236/237/238 measurement set was used.

In this research work, a method of AlN etching in a field effect transistor technology was developed and improved. Current−voltage characteristics of obtained MISFET structures were measured and compared. Influence of etching procedure on transistors properties was examined.

The obtained results allow improving the MISFET technology based on AlN film as a gate dielectric. The complete research work will allow using the developed technologies to implement in highly sensitive ion-sensitive field effect transistor (ISFET) structures in the future. The improvement of the etching element in the technology strongly influences the detection capabilities and operating range of the transistor.

Drugs are strategic products with essential functions in human health. An optimum design of the pharmaceutical supply chain is critical to avoid economic damage and adverse effects on human health. The vehicle-routing problem, focused on finding the lowest-cost routes with available vehicles and constraints, such as time constraints and road length, is an important aspect of this. In this paper, the vehicle routing problem (VRP) for a pharmaceutical company in Turkey is discussed.

A mixed-integer programming (MIP) model based on the vehicle routing problem with time windows (VRPTW) is presented, aiming to minimize the total route cost with certain constraints. As the model provides an optimum solution for small problem sizes with the GUROBI® solver, for large problem sizes, metaheuristic methods that simulate annealing and adaptive large neighborhood search algorithms are proposed. A real dataset was used to analyze the effectiveness of the metaheuristic algorithms. The proposed simulated annealing (SA) and adaptive large neighborhood search (ALNS) were evaluated and compared against GUROBI® and each other through a set of real problem instances.

The model is solved optimally for a small-sized dataset with exact algorithms; for solving a larger dataset, however, metaheuristic algorithms require significantly lesser time. For the problem addressed in this study, while the metaheuristic algorithms obtained the optimum solution in less than one minute, the solution in the GUROBI® solver was limited to one hour and three hours, and no solution could be obtained in this time interval.

The VRPTW problem presented in this paper is a real-life problem. The vehicle fleet owned by the factory cannot be transported between certain suppliers, which complicates the solution of the problem.