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This paper aims to realize the vertical interconnection in 3D radio frequency (RF) circuit by coaxial transitions with broad working bandwidth and small signal loss.

An advanced packaging method, 12-inch wafer-level through-mold-via (TMV) additive manufacturing, is used to fabricate a 3D resin-based coaxial transition with a continuous ground wall (named resin-coaxial transition). Designation and simulation are implemented to ensure the application universality and fabrication feasibility. The outer radius R of coaxial transition is optimized by designing and fabricating three samples.

The fabricated coaxial transition possesses an inner radius of 40 µm and a length of 200 µm. The optimized sample with an outer radius R of 155 µm exhibits S11 < –10 dB and S21 > –1.3 dB at 10–110 GHz and the smallest insertion loss (S21 = 0.83 dB at 77 GHz) among the samples. Moreover, the S21 of the samples increases at 58.4–90.1 GHz, indicating a broad and suitable working bandwidth.

The wafer-level TMV additive manufacturing method is applied to fabricate coaxial transitions for the first time. The fabricated resin-coaxial transitions show good performance up to the W-band. It may provide new strategies for novel designing and fabricating methods of RF transitions.

This paper aims to investigate the bonding of the photonic integrated circuit (PIC) chip with the heat sink using the AlNi self-propagating soldering method.

Compared to industrial optical modules, optical modules for aerospace applications require better reliability and stability, which is hard to achieve via the dispensing adhesive process that is used for traditional industrial optical modules. In this paper, 25 µm SAC305 solder foils and the AlNi nanofoil heat source were used to bond the back of the PIC chip with the heat sink. The temperature field and temperature history were analyzed by the finite element analysis (FEA) method. The junction-to-case thermal resistance is 0.0353°C/W and reduced by 85% compared with the UV hybrid epoxy joint.

The self-propagating reaction ends within 2.82 ms. The maximum temperature in the PIC operating area during the process is 368.5°C. The maximum heating and cooling rates of the solder were 1.39 × 107°C/s and −5.15 × 106°C/s, respectively. The microstructure of SAC305 under self-propagating reaction heating is more refined than the microstructure of SAC305 under reflow. The porosity of the heat sink-SAC305-PIC chip self-propagating joint is only 4.7%. Several metastable phases appear as AuSn3.4 and AgSn3.

A new bonding technology was used to form the bonding between the PIC chip with the heat sink for the aerospace optical module. The reliability and thermal resistance of the joint are better than that of the UV hybrid epoxy joint.