Microelectronics International

Category:

Electrical and Electronic Engineering

Table Of Contents: Volume 33 Issue 2

Study of the side gate junctionless transistor in accumulation region

Arash Dehzangi, Farhad Larki, Sawal Hamid Md Ali, Sabar Derita Hutagalung, Md Shabiul Islam, Mohd Nizar Hamidon, Susthitha Menon, Azman Jalar, Jumiah Hassan, Burhanuddin Yeop Majlis

The purpose of this paper is to analyse the operation of p-type side gate junctionless silicon transistor (SGJLT) in accumulation region through experimental measurements…

Template-free fabrication of NiO nanobelts: promising candidate for ethanol gas sensor at room temperature

Zhiwei Li

The purpose of this paper is to seek a surfactant or template-free, simple and green method to fabricate NiO nanobelts and to find an effective technique to detect the…

A simulation study of silver nanowire for water and ethane vapor sensing

Marjan Refaat, Mohammad Reza Moslemi

Nanowires, nanostructures with the diameter of the order of a nanometer, have recently attracted as gas sensors because of their interesting properties such as high…

Hermetic capacitive pressure sensors for biomedical applications

Daniela Diaz-Alonso, Mario Moreno-Moreno, Carlos Zuñiga, Joel Molina, Wilfrido Calleja, Juan Carlos Cisneros, Luis Niño de Rivera, Volodymir Ponomaryov, Felix Gil, Angel Guillen, Efrain Rubio

This paper aims to purpose the new design and fabrication scheme of Touch Mode Capacitive Pressure Sensor (TMCPS), which can be used in a wireless integrated resistor…

BiCMOS Colpitts oscillator for vector-sum interpolators

Deepa George, Saurabh Sinha

The demand for higher bandwidth has resulted in the development of mm-wave phased array systems. This paper aims to explore a technique that could be used to feed the…

Failure analysis of epoxy molded IC packages

Kamil Janeczek, Aneta Arazna, Konrad Futera, Grazyna Koziol

The aim of this paper is to present non-destructive and destructive methods of failure analysis of epoxy moulded IC packages on the example of power MOSFETs in SOT-227 package.

Thermal shock and degradation of metallization systems on silicon

Arkady Skvortsov, Sergey Zuev, Marina Koryachko, Vadim Glinskiy

The purpose of this study is to investigate the mechanisms of degradation of aluminum metallization under conditions of thermal shock caused by rectangular current pulses…

Optically-detected nonlinear oscillations of single crystal silicon MEMS accelerometers

Peyman Rafiee, Golta Khatibi, Francesco Solazzi

The purpose of this study is to address the nonlinear oscillations of single-crystal silicon micro-electromechanical systems (MEMS) accelerometers subjected to mechanical…

ISSN:

1356-5362

Online date, start – end:

1982

Copyright Holder:

Emerald Publishing Limited

Open access:

hybrid

Editor:

  • Professor John Atkinson