Category:Electrical and Electronic Engineering
Table Of Contents: Volume 27 Issue 3
Pressure indicating film characterization of pressure distribution in eutectic Au/Sn wafer‐to‐wafer bondingD. Spicer, K. Lai, K. Kornelsen, A. Brennan, N. Belov, M. Wang, T‐K. Chou, J. Heck, T. Zhu, S. Akhlaghi
The purpose of this paper is to characterize pressure non‐uniformity in a wafer‐to‐wafer bond chamber using pressure sensitive paper.
The purpose of this paper is to propose a new structure of GaN based metal‐semiconductor‐metal (MSM) photodiode, in which a thin unintentionally doped n‐type AlGaN layer…
The aim of this paper is to investigate microwave Ku band absorbance, complex permittivity, and permeability of SrFe12O19 thick films by a simple and novel waveguide technique.
Structural and optical properties of Alx Iny Ga1−x−y N quaternary alloys grown on sapphire substrates by molecular beam epitaxyM.A. Abid, H. Abu Hassan, Z. Hassan, S.S. Ng, S.K. Mohd Bakhori, N.H. Abd Raof
The purpose of this paper is to study the structural and optical characterization of Alx Iny Ga1−x−y N quaternary epilayers, which were grown on c‐plane (0001) sapphire…
The purpose of this paper is to describe a very low‐cost way to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using a…
The purpose of this paper is to demonstrate the influence of material properties and fabrication technique on the performance of an embedded pressure sensor. Based on…
Zinc oxide (ZnO) is an emerging optoelectronic material due to its various functional behaviors. The purpose of this paper is to report on the fabrication and…
Online date, start – end:1982
Copyright Holder:Emerald Publishing Limited
- Professor John Atkinson