COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 3 Issue 3
Subject:
Table of contents
ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH
L.D. MARINI, A. SAVINIA mixed variational formulation of the free boundary problem involved in the analysis of reverse‐biased semiconductor devices is put forward. This can be profitably used in the…
35
ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
M.S. MOCKIn a previous paper [COMPEL, Vol. 2, No. 3, pp. 117–139], an analysis was presented of a discretization procedure for a class of elliptic problems, including the…
76
HARMONIC ANALYSIS OF CURRENTS IN R, L SYSTEMS WITH SEMICONDUCTOR SWITCHING DEVICES
TADEUSZ SOBCZYK, BOGDAN SAPINSKIThe method presented here concerns the analysis of the steady‐state performance of semiconductor switching devices (SSDs) on the assumption that they are represented by…
38
APPLICATION OF A 3‐D EDDY CURRENT CODE (TRIFOU) TO NON‐DESTRUCTIVE TESTING
J.C. VERITEA 3‐D eddy current code, TRIFOU, has been used to simulate eddy currents flowing around cracks in very thick conductors, which is a fully 3‐D situation. The measurement set and…
102
ISSN:
0332-1649Online date, start – end:
1982Copyright Holder:
Emerald Publishing LimitedOpen Access:
hybridEditor:
- Prof Jan Sykulski