COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 2 Issue 4

SIMULATION OF COUPLED IMPURITIES DIFFUSION UNDER OXIDIZING CONDITIONS. APPLICATION TO THE OPTIMIZATION OF THE p‐WELLS IN CMOS TECHNOLOGY

Y. DEPEURSINGE, L. GUEX, J.M. MORET, P. WEISS

We have simulated the technological processes for the well formation in CMOS technology. The general problem of coupled impurities diffusion under oxidizing conditions has been…

SIMULATION OF SOLAR CELLS USING THE BOUNDARY‐ELEMENT METHOD

P. DE VISSCHERE

Under low level injection conditions, two‐dimensional modeling of many types of solar cells can be done on the basis of the simple diffusion equation. The general semiconductor…

THE INFINITE BOUNDARY ELEMENT METHOD AND ITS APPLICATION TO A COMBINED FINITE BOUNDARY ELEMENT TECHNIQUE FOR UNBOUNDED FIELD PROBLEMS

Y. KAGAWA, T. YAMABUCHI, S. KITAGAMI

The boundary element method is a useful method for the analysis of field problems involving unbounded regions. Therefore, the method can be used advantageously in combination with…

MAPPING OF INTERNAL DISTRIBUTIONS ONTO A LUMPED ELEMENT NETWORK FOR CMOS LATCH‐UP SIMULATION

C. WERNER, J. HARTER, D. TAKACS, A.W. WIEDER

An efficient device simulation method is presented, which has been derived from mapping the results of a complete two‐dimensional (2‐D) analysis onto an equivalent lumped element…