COMPEL - The international journal for computation and mathematics in electrical and electronic engineering: Volume 15 Issue 3
Table of contents
Simulation of the hydrodynamic model of semiconductor devices by a finite element method
Michel Fortin, Geng YangProposes a finite element method for numerical simulation of the hydrodynamic model of semiconductor devices. Presents some scaling factors and a variational formulation. Uses the…
A theoretical study of charge iteration
G. Aiello, S. Alfonzetti, S. Coco, N. SalernoCharge iteration is an iterative procedure for the finite element computation of unbounded electrical fields, created by voltaged conductors. It makes use of a fictitious…
Noise parameters of HEMTs: analysis of their properties from a circuit model approach
A. Caddemi, M. SanninoNoise parameters of high electron mobility transistors (HEMT) at microwave frequencies are a subject of active research since the knowledge of their performance is of key…
Simulation of electron states in quantum wires with mixed finite elements
S. Lepaul, F. Bouillault, A. De LustracRecent advances in the fabrication technology of heterojunction semiconductor nanostructures have made possible the realization of systems with extremely small sizes. In these…
Direct finite element solution for the capacitance, conductance or inductance, and force in linear electrostatic and magnetostatic problems
D.M. SpinkPresents a direct solution method for the determination of quantities such as capacitance, conductance and inductance from the finite element representation of electrostatic and…
ISSN:
0332-1649Online date, start – end:
1982Copyright Holder:
Emerald Publishing LimitedOpen Access:
hybridEditor:
- Prof Jan Sykulski