Selection of semiconductor switches in high frequency inverter fitted contactless power transfer system for reducing input current distortion

1Department of Electrical Engineering, College of Military Engineering, Pune-411031, India
2Electrical Engineering Department, Indian School of Mines (Under MHRD, Govt. of India), Dhanbad - 826004, India
3Electrical Engineering Department, Batanagar Institute of Engineering, Management and Science, Kolkatata-141, India
4Department of Electrical Engineering, University Institute of Technology, Burdwan, WB-713104, India

World Journal of Engineering

ISSN: 1708-5284

Publication date: 23 October 2015

Abstract

This paper investigates the selection of semiconductor switches used in contactless power transfer (CPT) system. In the present paper a single phase high frequency full bridge inverter using different semiconductor switches like IGBT, MPOSFET and GTO has been considered. Harmonic injection in input current of the inverter for different semiconductor switches has been analyzed using PSIM software. The THD of input current of the inverter for the particular switching device has been determined by using Fourier Transforms. It has been observed that THD in case of the IGBT is minimised.

Keywords

Citation

Ghosh, P.C., Sadhu, P.K., Roy, D. and Das, S. (2015), "Selection of semiconductor switches in high frequency inverter fitted contactless power transfer system for reducing input current distortion", World Journal of Engineering, Vol. 12 No. 5, pp. 471-478. https://doi.org/10.1260/1708-5284.12.5.471

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Emerald Group Publishing Limited

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