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Hydrothermal synthesis of nanostructured Zn2SnO4 ternary metal oxide semiconductor for toxic gas sensing application and its characterization study

Sagar H. Mane (Department of Physics, Karmaveer Abasaheb Alias N. M. Sonawane Arts, Commerce and Science College, Satana, India)
Tushar S. Wagh (Department of Physics, Karmaveer Ramraoji Aher Arts, Science and Commerce College, Deola, India)
Gotan H. Jain (Department of Physics, K.R.T. Arts, B.H. Commerce and A.M. Science (KTHM) College, Nashik, India)
Madhavrao K. Deore (Department of Physics, K.R.T. Arts, B.H. Commerce and A.M. Science (KTHM) College, Nashik, India)

Sensor Review

ISSN: 0260-2288

Article publication date: 24 September 2024

32

Abstract

Purpose

The study aims to develop an inexpensive metal oxide semiconductor gas sensor with high sensitivity, excellent selectivity for a specific gas and rapid response time.

Design/methodology/approach

This study synthesized Zn2SnO4 nanostructures using a hydrothermal method with a 1 M concentration of zinc chloride (ZnCl2) as the zinc source and a 0.7 M concentration of tin chloride (SnCl4) as the tin source. Thick films of nanostructured Zn2SnO4 were then produced using screen printing. The structural properties of Zn2SnO4 were confirmed using X-ray diffraction, and the formation of Zn2SnO4 nanoparticles was verified by transmission electron microscopy. Scanning electron microscopy was used to analyse the surface morphology of the fabricated material, while energy dispersive spectroscopy provided insight into the chemical composition of the thick film. These fabricated thick films underwent testing for various hazardous gases, including nitrogen dioxide, ammonia, hydrogen sulphide (H2S), ethanol and methanol.

Findings

The nanostructured Zn2SnO4 thick film sensor demonstrates a notable sensitivity to H2S gas at a concentration of 500 ppm when operated at 160°C. Its selectivity, response time and recovery time were assessed and documented.

Research limitations/implications

The primary limitations of this research on metal oxide semiconductor gas sensors include poor selectivity to specific gases, limited durability and challenges in achieving detection at room temperature.

Practical implications

The nanostructured Zn2SnO4 thick film sensor demonstrates a strong response to H2S gas, making it a promising candidate for commercial production. The detection of H2S is crucial in various sectors, including industries and sewage plants, where monitoring this gas is essential.

Social implications

Currently, heightened global apprehension about atmospheric pollution stems from the existence of perilous toxic and flammable gases. This underscores the imperative need for monitoring such gases. Toxic and flammable gases are frequently encountered in both residential and industrial environments, posing substantial hazards to human health. Noteworthy accidents involving flammable gases have occurred in recent years. It is crucial to comprehend the presence and composition of these gases in the surroundings for precise detection, measurement and control. Thus, there has been a significant push for extensive research and development in diverse sensor technologies using various materials and methodologies to monitor and regulate these gases effectively.

Originality/value

In this research, Zn2SnO4 nanostructures were synthesized using a hydrothermal method with ZnCl2 at a concentration of 1 M for zinc and SnCl4 at a concentration of 0.7 M for tin. Thick films of nanostructured Zn2SnO4 were then fabricated via screen printing technique. Following fabrication, all thick films were subjected to testing with various toxic gases, and the results were compared to previously published data. The analysis indicated that the nanostructured Zn2SnO4 thick film sensor demonstrated outstanding performance concerning gas response, gas concentration, selectivity and response time, particularly towards H2S gas.

Keywords

Citation

Mane, S.H., Wagh, T.S., Jain, G.H. and Deore, M.K. (2024), "Hydrothermal synthesis of nanostructured Zn2SnO4 ternary metal oxide semiconductor for toxic gas sensing application and its characterization study", Sensor Review, Vol. ahead-of-print No. ahead-of-print. https://doi.org/10.1108/SR-04-2024-0317

Publisher

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Emerald Publishing Limited

Copyright © 2024, Emerald Publishing Limited

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