(2012), "Renesas Electronics develops industrys first 40 nm embedded flash memory technology IP for automotive real-time applications", Microelectronics International, Vol. 29 No. 2. https://doi.org/10.1108/mi.2012.21829baa.014Download as .RIS
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Renesas Electronics develops industrys first 40 nm embedded flash memory technology IP for automotive real-time applications
Article Type: New products From: Microelectronics International, Volume 29, Issue 2
Renesas Electronics has developed the industry’s first 40-nm memory intellectual property (IP) for automotive real-time applications. Renesas will also be the first to launch 40 nm embedded flash microcontrollers (MCUs) for automotive applications using this 40 nm flash technology with samples available by the beginning of autumn 2012.
Renesas has proven experience in developing flash metal oxide nitride oxide silicon (MONOS) technology with high quality and reliability. Renesas was notably also the first to launch the 90 nm automotive flash MCU products in 2007.
Renesas flash MONOS technology is scalable while providing both high reliability and high performance at the same time. Evaluation results available from 40 nm flash test devices prove that excellent characteristics for three critical parameters (data retention, program/erase cycle endurance and programming time) have been achieved successfully. The 40 nm process node enables integration of several functional safety-related and communication interface. The Renesas 40 nm flash memory IP guarantees 20 years of retention and can be read from up to 170°C junction temperature. Additionally, the code flash supports read speed of 120 MHz, and the data flash achieves industry-leading long data-retention period of 20 years even after 125,000 of program/erase cycles.