(2012), "Intel and Micron receive Most Innovative Flash Memory Technology Award at 2011 Flash Memory Summit", Microelectronics International, Vol. 29 No. 1. https://doi.org/10.1108/mi.2012.21829aaa.013
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Copyright © 2012, Emerald Group Publishing Limited
Intel and Micron receive Most Innovative Flash Memory Technology Award at 2011 Flash Memory Summit
Article Type: Industry news From: Microelectronics International, Volume 29, Issue 1
Intel Corporation and Micron Technology, Inc. received the Most Innovative Flash Memory Technology Award August 10 at the 2011 Flash Memory Summit for the companies’ industry-leading 20 nanometer (nm) NAND Flash memory process technology.
The 20 nm 8 gigabyte (GB) NAND device from Intel and Micron delivers the highest capacity in the smallest form factor. Manufactured by IM Flash Technologies, the NAND flash joint venture from Intel and Micron, the new device is a breakthrough in NAND process and technology design, further extending the companies’ lithography leadership.
Shrinking NAND lithography to this technology node is the most cost-effective method for increasing NAND output to date, providing approximately 50 percent more gigabyte capacity than current technology. The new 20 nm process technology also helps further the companies’ dual goal to enable instant, affordable access to the world’s information.
For more information, please visit the web site: newsroom.intel.com and www.micron.com