Citation
(2011), "CAMECA unveils new semiconductor tool for B:SiGe and HKMG", Microelectronics International, Vol. 28 No. 2. https://doi.org/10.1108/mi.2011.21828bad.002
Publisher
:Emerald Group Publishing Limited
Copyright © 2011, Emerald Group Publishing Limited
CAMECA unveils new semiconductor tool for B:SiGe and HKMG
Article Type: New products From: Microelectronics International, Volume 28, Issue 2
CAMECA, a world leader in scientific instrumentation and metrology solutions for semiconductor labs and fabs, has unveiled the latest addition to its line of high-end metrology systems – the EX-300 metrology tool targeted for front-end process control of 22 nm technology nodes and beyond.
The EX-300 utilizes LEXES, a unique surface probing technique pioneered by CAMECA. The technology is now well established for addressing challenges in elemental composition, thickness determination and dopant dosimetry. With dozens of CAMECA LEXFAB 300 instruments currently installed at the top-ten semiconductor fabrication facilities worldwide, the technology is considered the standard for semiconductor R&D and ramping-up phases at the most advanced nodes as well as for high-volume production monitoring.
CAMECA optimised the performance of the EX-300 for challenging high-K metal gate (HKMG), epitaxial layers such as boron in silcon germanium (B:SiGe) and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production. In addition, the instrument is designed to deliver enhanced long-term stability and minimize mean time to repair.