CAMECA unveils new semiconductor tool for B:SiGe and HKMG

Microelectronics International

ISSN: 1356-5362

Article publication date: 10 May 2011



(2011), "CAMECA unveils new semiconductor tool for B:SiGe and HKMG", Microelectronics International, Vol. 28 No. 2.



Emerald Group Publishing Limited

Copyright © 2011, Emerald Group Publishing Limited

CAMECA unveils new semiconductor tool for B:SiGe and HKMG

Article Type: New products From: Microelectronics International, Volume 28, Issue 2

CAMECA, a world leader in scientific instrumentation and metrology solutions for semiconductor labs and fabs, has unveiled the latest addition to its line of high-end metrology systems – the EX-300 metrology tool targeted for front-end process control of 22 nm technology nodes and beyond.

The EX-300 utilizes LEXES, a unique surface probing technique pioneered by CAMECA. The technology is now well established for addressing challenges in elemental composition, thickness determination and dopant dosimetry. With dozens of CAMECA LEXFAB 300 instruments currently installed at the top-ten semiconductor fabrication facilities worldwide, the technology is considered the standard for semiconductor R&D and ramping-up phases at the most advanced nodes as well as for high-volume production monitoring.

CAMECA optimised the performance of the EX-300 for challenging high-K metal gate (HKMG), epitaxial layers such as boron in silcon germanium (B:SiGe) and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production. In addition, the instrument is designed to deliver enhanced long-term stability and minimize mean time to repair.

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