TSMC achieves 28 nm SRAM yield breakthrough

Citation

(2010), "TSMC achieves 28 nm SRAM yield breakthrough", Microelectronics International, Vol. 27 No. 1. https://doi.org/10.1108/mi.2010.21827aad.009

TSMC achieves 28 nm SRAM yield breakthrough

Article Type: New products From: Microelectronics International, Volume 27, Issue 1

Taiwan Semiconductor Manufacturing Company, Ltd has become the first foundry not only to achieve 28 nm functional 64 Mb SRAM yield, but also to achieve it across all three 28 nm nodes.

The TSMC 28 nm development and ramp-up has remained on track since the announcement made in September of 2008. The 28LP process is expected to enter risk production at the end of Q1 of 2010, followed closely by the 28HP risk production at the end of Q2 and the 28HPL risk production in Q3.

The 28 nm LP process will serve as a fast time-to-market and low-cost technology ideal for cellular and mobile applications. The 28 nm HP process is expected to support devices such as CPUs, GPUs, chipsets, FPGAs, networking, video game consoles, and mobile computing applications that are performance demanding. The 28 nm HPL process features low-power, low-leakage, and medium-high performance. It is aimed to support applications such as cell phone, smart netbook, wireless communication and portable consumer electronics that demand low leakage.

All 28 nm TSMC processes feature a comprehensive design infrastructure based on the company's Open Innovation Platform™ to extend the power of the technology to a broad range of differentiating products.