TY - JOUR AB - VL - 27 IS - 1 SN - 1356-5362 DO - 10.1108/mi.2010.21827aad.008 UR - https://doi.org/10.1108/mi.2010.21827aad.008 PY - 2010 Y1 - 2010/01/01 TI - NXP claims breakthrough in MOSFET performance with world's first sub-1 mΩ MOSFET in a Power S08 package T2 - Microelectronics International PB - Emerald Group Publishing Limited Y2 - 2024/03/29 ER -