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Emerald Group Publishing Limited
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Fairchild Semiconductor launches new generation of Super-Junction MOSFETs-SupreMOS™
Article Type: New products From: Microelectronics International, Volume 27, Issue 1
Fairchild Semiconductor brings designers of power supplies, lighting, display, and industrial applications a new generation of 600 V Super-Junction MOSFETs-SupreMOS. The combination of their low RDSon and total gate charge brings a 40 percent lower figure of merit (FOM) compared to Fairchild's 600 V SuperFET™ MOSFETs. These devices, the 165 mΩ-maximum FCP22N60N, FCPF22N60NT and FCA22N60N, and the 199 mΩ-maximum FCP16N60N and FCPF16N60NT offer best-in-class reverse recovery characteristics di/dt and dv/dt bringing higher reliability for resonant converter, LLC and phase-shifted full-bridge topologies found in switch mode power supply designs.
Compared to SuperFET MOSFETs, these 600 V Super-Junction MOSFETs offer a low-gate charge for the same RDSon, offering excellent switching performance and delivering 20 percent less switching and conduction losses, resulting in higher efficiency. They provide low input and output capacitances, improving efficiency at light load conditions. These features enable power supplies to meet ENERGY STAR® 80 PLUS Gold classification for desktop PCs and Platinum classification for servers.
These products are part of Fairchild's comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (−500 to 1,000 V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.
For further information, please visit the web site: www.fairchildsemi.com