Enhanced tribological performance of CuS thin film on Si substrate: the case of APS-PAA buffer layer

Abstract

Purpose

The purpose of this paper was to demonstrate the influence of a 3-aminopropyl-triethoxysilane–polyacrylic acid (amino propyl silane (APS)-PAA) buffer layer on the tribological performance of copper sulfide (CuS) thin film on silicon (Si) substrate.

Design/methodology/approach

The APS-PAA buffer layer was first deposited on Si substrate by a self-assembling method. Then, the deposited film was coated by a CuS film by a successive ionic layer absorption and reaction (SILAR) method. The structures and morphologies of the prepared films were characterized by X-ray diffraction and atomic force microscopy. The results showed that the prepared CuS film with a PAA-APS double layer had a good crystallinity and surface morphology. The tribological performance of the prepared film was analyzed on UMT-2 tribometer and scanning electric microscope.

Findings

With use of an APS-PAA buffer layer, the CuS thin films became compact, smooth and uniform. The tribological performance of the CuS film was greatly enhanced by using an APS-PAA buffer layer.

Originality/value

The paper is the first to demonstrate that the CuS film exhibited enhanced structure, morphology and tribological characteristics by using an APS-PAA buffer layer.

Citation

Zhang, Y. (2015), "Enhanced tribological performance of CuS thin film on Si substrate: the case of APS-PAA buffer layer", Industrial Lubrication and Tribology, Vol. 67 No. 1, pp. 81-84. https://doi.org/10.1108/ILT-06-2012-0054