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THE INFLUENCE OF LATTICE HEATING ON SEMICONDUCTOR DEVICE CHARACTERISTICS

Y. Apanovich (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
R. Cottle (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
B. Freydin (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
E. Lyumkis (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
B. Polsky (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
A. Tchernaiev (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)
P. Blakey (Silvaco International, 4701 Patrick Henry Drive, Bldg.3, Santa Clara, California 95054, USA)

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

ISSN: 0332-1649

Article publication date: 1 April 1993

35

Abstract

Self‐consistent electrothermal simulation of modern semiconductor devices is required for the accurate and efficient design and optimization of many semiconductor devices. The need to perform this type analysis in order to predict the behavior of power devices was realized many years ago. It is now clear that nonisothermal analysis can be very important for VLSI devices as well.

Citation

Apanovich, Y., Cottle, R., Freydin, B., Lyumkis, E., Polsky, B., Tchernaiev, A. and Blakey, P. (1993), "THE INFLUENCE OF LATTICE HEATING ON SEMICONDUCTOR DEVICE CHARACTERISTICS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 531-539. https://doi.org/10.1108/eb051826

Publisher

:

MCB UP Ltd

Copyright © 1993, MCB UP Limited

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