TY  - JOUR
AB  - A non‐local pseudopotential model is used to generate realistic bandstructure for InP and GaAs. This is used to calculate the thresholds for impact ionisation and ionisation rates in these materials as a function of direction in wavevector space. Results are presented for a range of transitions.
VL  - 12
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051819
UR  - https://doi.org/10.1108/eb051819
AU  - Wilson S.P.
AU  - Brand S.
AU  - Beattie A.R.
AU  - Abram R.A.
PY  - 1993
Y1  - 1993/01/01
TI  - THE USE OF REALISTIC BANDSTRUCTURE IN IMPACT IONISATION CALCULATIONS FOR WIDE BANDGAP SEMICONDUCTORS: APPLICATION TO INP AND GaAS
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 457
EP  - 473
Y2  - 2024/09/19
ER  -