CHARACTERIZATION OF SUBMICROMETER GaAs MESFET USING DRIFT‐DIFFUSION SIMULATOR
ISSN: 0332-1649
Article publication date: 1 April 1993
Abstract
An empirical velocity‐field relationship, based on Monte Carlo simulation, is used to modify a drift‐diffusion model for the characterization of short gate GaAs MESFET's. The modified drift‐diffusion model is used to generate both the steady‐state and the small‐signal parameters of submicron GaAs MESFET's. The current, transconductance, and cutoff frequency are compared with two‐dimensional Monte Carlo simulation results on a 0.2 µm gate‐length. The model is also used to predict measured I‐V and s‐parameters of a 0.5 µm gate‐length ion‐implanted GaAs MESFET. The comparison and the analysis made, support the accuracy of the modified drift‐diffusion simulator and makes it computationally efficient for analysis of short‐gate devices.
Citation
Fardi, H.Z. (1993), "CHARACTERIZATION OF SUBMICROMETER GaAs MESFET USING DRIFT‐DIFFUSION SIMULATOR", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 4, pp. 361-375. https://doi.org/10.1108/eb051811
Publisher
:MCB UP Ltd
Copyright © 1993, MCB UP Limited