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INVERSE MODELLING OF AMORPHOUS SILICON SOLAR CELL TIME‐OF‐FLIGHT TRANSIENTS

A.A. Buykx (Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, Mekelweg 4, 2600 GA, DELFT, the Netherlands)
H.M. Wentinck (Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, Mekelweg 4, 2600 GA, DELFT, the Netherlands)
W. Crans (Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, Mekelweg 4, 2600 GA, DELFT, the Netherlands)
J.W. Metselaar (Delft University of Technology, Department of Electrical Engineering, Electrical Materials Laboratory, P.O. Box 5031, Mekelweg 4, 2600 GA, DELFT, the Netherlands)

Abstract

For the extraction of transport parameters from Time‐of‐Flight (TOF) measurements a simulation and optimization program was developed that uses the principle of Inverse Modelling. The model describing the physical transport processes in an amorphous device is discussed as well as the implementation of the simulator in the dataprocessor and optimization driver PROFILE. As an example a simulation of TOF measurements at an amorphous p‐i‐n solar cell is shown.

Citation

Buykx, A.A., Wentinck, H.M., Crans, W. and Metselaar, J.W. (1991), "INVERSE MODELLING OF AMORPHOUS SILICON SOLAR CELL TIME‐OF‐FLIGHT TRANSIENTS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 589-598. https://doi.org/10.1108/eb051733

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited