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DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS

J.B. Johnson (IBM Corp., Essex Junction, Vermont, USA)
S.H. Voldman (IBM Corp., Essex Junction, Vermont, USA)
T.D. Linton (MasPar Computer, Sunnyvale, California, USA)

Abstract

Challenges to a robust and accurate implementation of electric‐field‐enhanccd thermal‐generation mechanisms in a drift‐diffusion‐based semiconductor‐device simulation code are discussed and solutions proposed. The implementation of the physical models and associated numerical methods is applied to the simulation of leakage currents in trench‐DRAM cells.

Citation

Johnson, J.B., Voldman, S.H. and Linton, T.D. (1991), "DISCRETIZATION METHODS AND PHYSICAL MODELS FOR SIMULATING LEAKAGE CURRENTS IN SEMICONDUCTOR DEVICES WITH APPLICATION TO MODELING TRENCH‐DRAM CELLS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 573-588. https://doi.org/10.1108/eb051732

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited