I‐V characteristics of GaAs n‐i‐n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse‐biased n‐i junction becomes a cause of steep current rise when an acceptor density in the i‐layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n‐i‐n structures are also simulated, and are shown to be strongly affected by existence of n‐i junctions.
Horio, K. and Yanai, H. (1991), "EFFECTS OF JUNCTIONS ON CONDUCTION PROPERTIES OF GaAs n‐i‐n STRUCTURES INCLUDING DEEP LEVELS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 563-572. https://doi.org/10.1108/eb051731
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