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EFFECTS OF JUNCTIONS ON CONDUCTION PROPERTIES OF GaAs n‐i‐n STRUCTURES INCLUDING DEEP LEVELS

K. Horio (Faculty of System Engineering, Shibaura Institute of Technology 307 Fukasaku, Omiya 330, Japan Faculty of Engineering, Shibaura Institute of Technology 3–9–14, Shibaura, Minato‐ku, Tokyo 108, Japan)
H. Yanai (Faculty of Engineering, Shibaura Institute of Technology 3–9–14, Shibaura, Minato‐ku, Tokyo 108, Japan)

Abstract

I‐V characteristics of GaAs n‐i‐n structures are calculated by considering impact ionization of carriers. Impact ionization at reverse‐biased n‐i junction becomes a cause of steep current rise when an acceptor density in the i‐layer is high. It is shown that an optimum acceptor density exists to keep a good isolation. Photoconduction transients of GaAs n‐i‐n structures are also simulated, and are shown to be strongly affected by existence of n‐i junctions.

Citation

Horio, K. and Yanai, H. (1991), "EFFECTS OF JUNCTIONS ON CONDUCTION PROPERTIES OF GaAs n‐i‐n STRUCTURES INCLUDING DEEP LEVELS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 563-572. https://doi.org/10.1108/eb051731

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited