TY  - JOUR
AB  - The current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are solved using a finite difference technique to calculate device parameters such as gm and fT. The low field carrier mobility is computed by using a single partice Monte Carlo program. In the simulation all relevant scattering mechanisms are accounted for.
VL  - 10
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051729
UR  - https://doi.org/10.1108/eb051729
AU  - Gokhale M.
AU  - Anwar A.F.M.
AU  - Carrol R.D.
AU  - Jain F.C.
PY  - 1991
Y1  - 1991/01/01
TI  - MONTE CARLO SIMULATION OF SiGe/Si MESFETs
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 547
EP  - 552
Y2  - 2024/04/24
ER  -