The current‐voltage (Id—Vd) characteristics and microwave performance of Si1−xGex MESFETs are discussed. The 2D Poisson's equation along with the drift and diffusion equation are solved using a finite difference technique to calculate device parameters such as gm and fT. The low field carrier mobility is computed by using a single partice Monte Carlo program. In the simulation all relevant scattering mechanisms are accounted for.
Gokhale, M., Anwar, A.F.M., Carrol, R.D. and Jain, F.C. (1991), "MONTE CARLO SIMULATION OF SiGe/Si MESFETs", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 547-552. https://doi.org/10.1108/eb051729
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