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MONTE CARLO TECHNIQUE FOR SIMULATION OF HIGH ENERGY ELECTRONS

M. Nedjalkov (Institute of Microelectronics, 1784 Sofia, Bulgaria)
P. Vitanov (Institute of Microelectronics, 1784 Sofia, Bulgaria)

Abstract

A Monte Carlo (MC) technique useful for calculation of the high energy tail of the distribution function (d.f) is proposed. The well known MC technique for simulation in rarely visited region splits the real history of the particle, that has entered in this region, in N subhystories with weights 1/N. But the lucky event for entering must be waited to happen during the simulation. A presentation of the d.f is found here, which allows, knowing the d.f in the low (common) energy region, to simulate only high energy events. This technique can be used for example when gate current in submicrometer MOS devices is calculated.

Citation

Nedjalkov, M. and Vitanov, P. (1991), "MONTE CARLO TECHNIQUE FOR SIMULATION OF HIGH ENERGY ELECTRONS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 525-530. https://doi.org/10.1108/eb051726

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited