ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION

Abstract

In the past decade, very effective techniques for the solution of the drift‐diffusion equations have been developed. This has enabled the simulation of a large variety of semiconductor devices in a robust and efficient way. However, the rapid development and miniaturization of devices necessitate the use of extended physical models in order to still provide an accurate description of device performance. In order to guarantee a similar degree of robustness and efficiency for these extended models, new algorithms have to be developed. In this paper we will present a number of advanced numerical techniques which have been developed for this purpose.

Citation

Schilders, W.H.A. (1991), "ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 439-448. https://doi.org/10.1108/eb051719