TY  - JOUR
AB  - A new model to describe dopant diffusion and recrystallisation in polycrystalline silicon during thermal treatment is presented. The full 3D microstructure of the material is considered and a local homogenisation approximation introduced. A parallel diffusion model for diffusion in grain boundaries and grain interior with grain growth and segregation is developed within this approximation. The model is solved in a 2D vertical section using a finite element discretisation. An example of the application of this model to a one micron bipolar transistor is given.
VL  - 10
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051716
UR  - https://doi.org/10.1108/eb051716
AU  - Jones SK
AU  - Gérodolle A
PY  - 1991
Y1  - 1991/01/01
TI  - 2D PROCESS SIMULATION OF DOPANT DIFFUSION IN POLYSILICON
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 401
EP  - 410
Y2  - 2024/05/09
ER  -