TY  - JOUR
AB  - A comprehensive and computationally efficient modeling strategy for the rapid and accurate simulation of implanted impurity distribution profiles in single‐crystal silicon has been developed. This modeling strategy exploits the advantages of both Monte Carlo simulation and semi‐empirical models by combining the two approaches in a complementary manner. The dual Pearson semi‐empirical model is used to accurately and efficiently model the dose and implant angle dependence of impurity profiles as well as the dependence on energy. This new comprehensive model allows convenient and accurate simulation of implanted boron distribution profiles in single‐crystal silicon as a function of dose, tilt angle, and rotation angle, in addition to ion energy, and it has been demonstrated by implementation in the process simulation code SUPREM III.
VL  - 10
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051710
UR  - https://doi.org/10.1108/eb051710
AU  - Park Changhae
AU  - Klein Kevin M.
AU  - Tasch Al F.
AU  - Simonton Robert B.
AU  - Novak Steve
AU  - Lux Gayle
PY  - 1991
Y1  - 1991/01/01
TI  - A COMPREHENSIVE AND COMPUTATIONALLY EFFICIENT MODELING STRATEGY FOR SIMULATION OF BORON ION IMPLANTATION INTO SINGLE‐CRYSTAL SILICON WITH EXPLICIT DOSE AND IMPLANT ANGLE DEPENDENCE
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 331
EP  - 340
Y2  - 2024/04/25
ER  -