A three‐parameter model for the electronic stopping power of boron in silicon is presented. The model parameters are determined from implantations into amor‐phous silicon and from channeling implantations into <100> and <100> silicon. Simulated boron profiles obtained with the new model, with the Lindhard model, and with the Oen‐Robinson model, respectively, are compared with experimental data on channeling and tilted implantations at 17 and 150 keV.
Hobler, G., Pötzl, H., Palmetshofer, L., Schork, R., Lorenz, J., Tian, C., Gara, S. and Stingeder, G. (1991), "AN EMPIRICAL MODEL FOR THE ELECTRONIC STOPPING OF BORON IN SILICON", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 323-330. https://doi.org/10.1108/eb051709
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