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A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL “Y” PARAMETERS AND A FULL TIME DOMAIN SIMULATION

Douglas A. Teeter (Student Member, IEEE Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109‐2122, U.S.A.)
Jack R. East (Member, IEEE Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109‐2122, U.S.A.)
Richard K. Mains (Member, IEEE Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109‐2122, U.S.A.)
George I. Haddad (Fellow, IEEE Department of Electrical Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109‐2122, U.S.A.)

Abstract

This model is intended to simulate the large signal performance of heterojunction bipolar transistors for use in high power, high frequency, oscillators, amplifiers, and mixers. A temperature model which includes velocity overshoot and carrier energy effects has been developed. The model is used to calculate the large signal “Y” parameters of an HBT. A comparison is made between predicted power performance using the “Y” parameters and a fully numerical, time domain computation. Advantages and disadvantages of each approach are given.

Citation

Teeter, D.A., East, J.R., Mains, R.K. and Haddad, G.I. (1991), "A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL “Y” PARAMETERS AND A FULL TIME DOMAIN SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 301-309. https://doi.org/10.1108/eb051707

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited