TY  - JOUR
AB  - The effect of doping the quantum well (QW) on the distribution of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMT) is discussed. In con‐ventional HEMTs the QW is unintentionally doped to utilize the higher mobility of the QW material. The overlap between the carrier and the dopant distribution may be minimized by selectively doping the QW.
VL  - 10
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051704
UR  - https://doi.org/10.1108/eb051704
AU  - Anwar A.F.M.
AU  - Carrol R.D.
PY  - 1991
Y1  - 1991/01/01
TI  - TAILORING THE TWO DIMENSIONAL ELECTRON GAS DISTRIBUTION BY SELECTIVE DOPING OF THE QUANTUM WELL
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 269
EP  - 275
Y2  - 2024/04/25
ER  -