TY  - JOUR
AB  - Intrinsic high‐frequency oscillations (≈2.5 THz) in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance (NDR) region of the Current‐Voltage (I‐V) characteristics of a Resonant Tunneling Diode (RTD), suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a two‐branch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuit‐induced behavior can occur in real RTD experiments.
VL  - 10
IS  - 4
SN  - 0332-1649
DO  - 10.1108/eb051702
UR  - https://doi.org/10.1108/eb051702
AU  - Buot F.A.
AU  - Jensen K.L.
PY  - 1991
Y1  - 1991/01/01
TI  - INTRINSIC HIGH‐FREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES
T2  - COMPEL - The international journal for computation and mathematics in electrical and electronic engineering
PB  - MCB UP Ltd
SP  - 241
EP  - 253
Y2  - 2024/04/19
ER  -