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INTRINSIC HIGH‐FREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES

F.A. Buot (Naval Research Laboratory, Washington, DC 20375–5000)
K.L. Jensen (Naval Research Laboratory, Washington, DC 20375–5000)

Abstract

Intrinsic high‐frequency oscillations (≈2.5 THz) in current and corresponding quantum well density, which have been simulated for a fixed bias voltage in the Negative Differential Resistance (NDR) region of the Current‐Voltage (I‐V) characteristics of a Resonant Tunneling Diode (RTD), suggest an equivalent nonlinear autonomous circuit model. The intrinsic circuit parameters are calculated directly from the results of the quantum transport numerical simulations. These consist of a resistor in series with a two‐branch parallel circuit, one branch consists of a capacitor and the other branch consists of an inductor in series with a nonlinear resistor. It is however suggested that much more complex external circuit‐induced behavior can occur in real RTD experiments.

Citation

Buot, F.A. and Jensen, K.L. (1991), "INTRINSIC HIGH‐FREQUENCY OSCILLATIONS AND EQUIVALENT CIRCUIT MODEL IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF RESONANT TUNNELING DEVICES", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 241-253. https://doi.org/10.1108/eb051702

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited