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TRANSIENT SIMULATION OF SILICON DEVICES UNDER HIGH CARRIER INJECTION. COMPARISON OF VARIOUS TIME STEPPING SCHEMES

A. MICHEZ (Centre d'EIectronique de Montpellier (associé au C.N.R.S., U.A. 391) Université des Sciences et Techniques du Languedoc Place E. Bataillon, 34095 Montpellier Cedex 5, France)
G. BORDURE (Centre d'EIectronique de Montpellier (associé au C.N.R.S., U.A. 391) Université des Sciences et Techniques du Languedoc Place E. Bataillon, 34095 Montpellier Cedex 5, France)

Abstract

This paper presents an approach to the time discretization of electron and hole continuity equations in semiconductors. We propose a nth order backward differentiation formula with variable stepsize determined by a local truncation error evaluation. Up to the fifth order is examined. As an example, the effect of a heavy ion (63Cu , 70 MeV) on a silicon diode is simulated with a 3D axi‐symmetrical model, using various time stepping schemes. The results obtained are compared. For this particular problem and the mesh considered, the third order is the most efficient one to reduce the calculation time.

Citation

MICHEZ, A. and BORDURE, G. (1991), "TRANSIENT SIMULATION OF SILICON DEVICES UNDER HIGH CARRIER INJECTION. COMPARISON OF VARIOUS TIME STEPPING SCHEMES", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 10 No. 4, pp. 231-240. https://doi.org/10.1108/eb051701

Publisher

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MCB UP Ltd

Copyright © 1991, MCB UP Limited