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The Material Science of a Non‐warp, Hermetic, Non‐battery Effect, Crystallising Dielectric for Simplification of Multilayer Hybrid Circuitry Construction

B. Sjoeling (Ferro Corporation, Electronic Materials Division, Sindelfingen, Germany)
S. Turvey (Ferro Corporation, Electronic Materials Division, Sindelfingen, Germany)

Microelectronics International

ISSN: 1356-5362

Article publication date: 1 March 1992

Abstract

To meet the hybrid industry's growing need for low‐cost, high‐reliability, high‐density multilayer circuitry, the authors' company has developed a non‐warp, hermetic, non‐battery effect, crystallising dielectric for use with gold (Au) and silver (Ag) ‐based conductors. The crystallising nature of the dielectric, together with the use of glasses which do not contain highly mobile ions, ensures high dielectric Ag‐migration resistance. The crystalline structure of the dielectric also has the advantage of ensuring excellent solderability and bondability of top conductors. This paper will deal with the most important theoretical considerations when developing such a dielectric, together with its main properties and advantages. The results are supported by graphs and diagrams showing the properties of this new material.

Citation

Sjoeling, B. and Turvey, S. (1992), "The Material Science of a Non‐warp, Hermetic, Non‐battery Effect, Crystallising Dielectric for Simplification of Multilayer Hybrid Circuitry Construction", Microelectronics International, Vol. 9 No. 3, pp. 49-51. https://doi.org/10.1108/eb044479

Publisher

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MCB UP Ltd

Copyright © 1992, MCB UP Limited